Modeling of the frequency modulation response of semiconductor diode lasers

Hafskjaer, L.; Sudbø, Asle

doi:10.1109/3.171

Cited by 9 publications

(2 citation statements)

References 24 publications

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“…To find the optimal design of an optical communication system with specific requirement, accurate and rapid analyses and simulation of semiconductor laser performance, such as small-signal modulation bandwidth, dynamic impedance, intensity, and frequency noise levels, large-signal nonlinear distortion, etc., are required [1][2][3][4]. Many sophisticated computer programs [5][6], analytical solutions [7,8], numerical integration simulation model [9], and equivalent circuit models [10 -15] have been established and can accurately predict important characteristics of semiconductor lasers.…”

Section: Introductionmentioning

confidence: 99%

Rate‐equation‐based circuit model of high‐speed semiconductor lasers

Zhang

Zhu

Pun

et al. 2007

Micro & Optical Tech Letters

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Based on rate equations of semiconductor laser, a symbolically-defined model for optical transmission system performance evaluation and network characterization in both time-and frequencydomains is presented. The steady-state and small-signal characteristics, such as current-photon density curve, current-voltage curve, and input impedance, can be predicted from this model. Two important dynamic characteristics, second-order harmonic distortion and two-tone thirdorder intermodulation products, are evaluated under different driving conditions. Experiments show that the simulated results agree well with the published data.

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Section: Introductionmentioning

confidence: 99%

Rate‐equation‐based circuit model of high‐speed semiconductor lasers

Zhang

Zhu

Pun

et al. 2007

Micro & Optical Tech Letters

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“…The desire for high-speed data transmission, including that of video signals, 1-3 and the need for broadband communication, 4 -7 have been driving forces. 9 Sophisticated mathematical models of laser noise have been introduced, 20-26 but they are not generally suitable for both device and systems simulations as proposed in Refs. [8][9][10][11] Laser intensity noise [12][13][14] and nonlinear distortion [15][16][17][18][19] are the main factors limiting the dynamic range in laser-based optical communication links.…”

Section: Introductionmentioning

confidence: 99%

Analytical expressions, modeling, and simulations of intensity and frequency fluctuations in directly modulated semiconductor lasers

2004

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Analytical expressions for the intensity and frequency/phase noise of single-mode semiconductor lasers based on quantummechanical rate equations are derived. Correlated photons, electrons, and phase Langevin noise sources and their auto and cross-correlation relations are presented, along with a novel self-consistent normalized laser model that includes the laser's correlated noise sources. A symbolically defined device (SDD) is constructed using the proposed normalized model and implemented in Agilent's advanced design system (ADS) CAD tool. Dynamic laser characteristics are predicted using the SDD implementation for 1300-nm InGaAsP/InP lasers. The results of time domain dynamic simulations of photons, carriers, optical output power, and phase-with and without the effects of noise-are presented. Simulation results are used to show the effects of random noise on both the phase and optical power output of semiconductor lasers. Simulation results are analyzed to demonstrate the resonance frequency shift dependence on the bias current levels, the relation between the frequency response and the bias current, and the dependence of the laser line width broadening on the frequency fluctuations. Comparison between the presented results and other published results (simulations and measurements) show good agreement while achieving simulation time enhancement. The suitability of the proposed models for the study and characterization of the performance of complete systems in both circuit and system simulations is examined.

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