Modeling of Sb‐heterostructure backward diode for millimeter‐ and submillimeter‐wave detection

Abstract

We present modeling of Sb‐heterostructure backward tunneling diode (Sb‐HBD) for high efficient millimeter‐ and submillimeter wave detection. The diode heterostructure is modeled and optimized using TCAD software implementing a non‐local band‐to‐band tunneling model combining with the standard drift‐diffusion model. The physical device model was found to be in good agreement with reported experimental results. InAsSb/AlSb/AlGaSb structures were proposed and simulated considering the material growth. The potential of the Sb‐HBDs for high frequency operation applications is investigated. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Effect of buffer quality on the performance of InAs/AlSb Heterostructure Backward Tunneling Diode

“…Thus, much of the growth is carried out on GaAs substrate, which has a large lattice mismatch (7%) respect to InAs. Since the tunneling barriers of the InAs/AlSb HBTDs are usually very thin (1-3 nm), interface roughness or fluctuation in tunneling barrier thickness are expected to be important [2]. On the other hand, dislocations especially the threading dislocations (TDs) are usually detrimental to device performances.…”