Modeling of resonant-tunneling diode with uniform and graded emitter

Fediai, Artem; Moskaliuk, Vladimir

doi:10.1109/elnano.2013.6552012

Cited by 1 publication

(1 citation statement)

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“…The experimental device shows a resonant peak at 0.165 V with a plateau-like feature between 0.17 and 0.18 V. Previous experimental measurements of AlGaAs RTDs have also observed plateau features in their I-V characteristics. 11,55 Several theories for their origin have been proposed including intervalley interface scattering, 56 quantized interface states, 55,57 or time averaged oscillations. 58 The I-V curves are almost identical on the voltage ramp-up and ramp-down with only a minor current change (shift down of the curve of less than 5% in current for the ramp-down) and no voltage hysteresis.…”

Section: Resultsmentioning

confidence: 99%

Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices

Grier

Valavanis

Edmunds

et al. 2015

Journal of Applied Physics

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We investigate electron transport in epitaxially grown nitride-based resonant tunneling diodes (RTDs) and superlattice sequential tunneling devices. A density-matrix model is developed, and shown to reproduce the experimentally measured features of the current-voltage curves, with its dephasing terms calculated from semi-classical scattering rates. Lifetime broadening effects are shown to have a significant influence in the experimental data. Additionally, it is shown that the interface roughness geometry has a large effect on current magnitude, peak-to-valley ratios and misalignment features; in some cases eliminating negative differential resistance entirely in RTDs. Sequential tunneling device characteristics are dominated by a parasitic current that is most likely to be caused by dislocations; however, excellent agreement between the simulated and experimentally measured tunneling current magnitude and alignment bias is demonstrated. This analysis of the effects of scattering lifetimes, contact doping and growth quality on electron transport highlights critical optimization parameters for the development of III-nitride unipolar electronic and optoelectronic devices. V C 2015 AIP Publishing LLC. [http://dx

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