Modeling of power semiconductor devices, problems, limitations and future trends

Fatemizadeh, B.; Lauritzen, P.O.; Siber, D.

doi:10.1109/cipe.1996.612346

Cited by 4 publications

(1 citation statement)

References 40 publications

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“…With the development of power electronics technology, insulated gate bipolar transistors (IGBTs) have become an important component in a power electronics device, and is used in converters and inverters as well as electrical power systems more widely. To accurately simulate the transient behaviour and predict the switching and conducting losses in these applications, accurate IGBT models are needed (Rodríguez et al , 2010; Tseng and Palmer, 1994; Fatemizadeh et al , 1996; Kolessar and Nee, 2000). Moreover, it is essential to develop a suitable model to simulate the excess carrier distribution in the base region of an IGBT (Lu et al , 2010).…”

Section: Introductionmentioning

confidence: 99%

A numerical method for solving the physics-based model of IGBT with all free-carrier injection conditions in the base region

Chen

Yang

2017

COMPEL

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Purpose The purpose of this paper is to provide an accurate model and method to simulate the transient performances of an insulated gate bipolar transistor (IGBT) in an arbitrary free-carrier injection condition. Design/methodology/approach A numerical model and method for solving the physics-based model, an ambipolar diffusion equation-based model, of an IGBT is proposed. Findings The results of the proposed model are very close to the tested ones. Originality/value A mathematical model for an IGBT considering all free-carrier injection conditions is introduced, and a numerical solution methodology is proposed.

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