Modeling of poly-crystalline silicon ingot crystallization during casting and theoretical suggestion for ingot quality improvement

Adjustment of oxygen transport phenomena for Czochralski silicon crystal growth

“…The following mass transportation equation can be applied to calculate the oxygen concentration in silicon ingot, silicon melt. and argon flow [ 26 ]: in which C is the oxygen concentration, and D is the diffusion coefficient of oxygen in silicon melt, silicon ingot, or argon gas.…”

On the current research progress of metallic materials fabricated by laser powder bed fusion process: a review

“…During solidification, the grain growth orientation aligns with the direction of the temperature gradient. The competitive growth of different grains causes grains with similar orientations to grow fast, whereas grains with different orientations grow slowly [184]. Furthermore, when neighbouring grains impinge on each other, the horizontal grain growth is hindered, and the high rate of elongated grain growth reduces the possibility of nucleation occurring in the liquid ahead of the columnar zone [185].…”

Cellular Automaton Modeling of the Transition of Multi-Crystalline Silicon from a Planar Faceted Front to Equiaxed Growth

“…In fact, during the solidification process, carbon rejection at the solid-liquid interface leads to an increase of the carbon concentration in the silicon liquid. When carbon concentration reaches the maximum solubility limit, the silicon reacts with carbon to form SiC, allowing SiC particles to precipitate into the Si-melt (i.e., the supersaturation with respect to SiC) [20].…”