Modeling of oxide-based ECRAM programming by drift-diffusion ion transport

Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

“…Several groups have explored metrology parameters along the device and system level modeling approach to understand the design and optimization of switching devices and arrays. [217][218][219][220][221][222][223][224][225][226] In the field of NVM's simulation tools can be used to understand the physical design parameters, experimental data, process optimizations, performance prediction, and so on. However a single model can't fulfill all the requirements.…”

“…[1][2][3][4][5][6][7][8][9] Among several adopted high-k materials, sub-stoichiometric hafnium oxide (HfO x ) or switching properties and predicted similar behavior. [217][218][219][220][221][222][223][224][225][226] Both theoretical and experimental findings equip this technology for emerging applications. [227][228][229][230][231][232][233][234][235][236][237][238][239][240][241][242][243][244] Depending on the structural design and materials, the switching in RRAM devices can be further classified as volatile threshold switch (TS) and non-volatile memory switch (MS).…”

Ion-Driven Electrochemical Random-Access Memory-Based Synaptic Devices for Neuromorphic Computing Systems: A Mini-Review

“…A structure that efficiently generates heat and confines it in the ECRAM can promotes ion movement, resulting in faster switching speed. To date, physics-based modeling [ 42 ] has rarely been studied except for the equivalent circuit model [ 43 ]. A model that fits well with the experimental results will not only allow the design exploration of the synaptic devices for further improvement but also extrapolate the reliability perspective of ECRAMs.…”

Strategies to Improve the Synaptic Characteristics of Oxygen-Based Electrochemical Random-Access Memory Based on Material Parameters Optimization

“…Therefore, it is very difficult to uniformly control atomic-level changes in local filaments by applying identical voltage pulses. To solve this problem, three-terminal (3-T)-based electrochemical RAM (ECRAM) devices have been developed in which conductance is linearly changed by the bulk channel region. − In early ECRAM studies, channel conductivity was changed by using protons and lithium ions. − Excellent synaptic properties were achieved through facile ion migration based on a small ion mass. However, the main disadvantage is that conventional complementary metal–oxide–semiconductor (CMOS) processes cannot be used because a polymer- or lithium-ion-battery-based material is used as both the channel and electrolyte materials. , Moreover, because a battery stack is used as a memory device, lithium-ion-based ECRAM devices require a selector device because of open-circuit potentials …”

“…To overcome these limitations, oxygen-based ECRAM (O-ECRAM) devices are being studied as next-generation synaptic devices. − O-ECRAM devices have advantages such as CMOS compatibility and improved retention. Because RRAM-based materials are used as both electrolytes and channels in O-ECRAM devices, conventional CMOS processes can be utilized .…”