Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO<sub>2</sub> MOSFETs

Harmon, Nicholas J.; McMillan, Stephen R.; Ashton, James P.; Lenahan, Patrick M.; Flatté, Michael E.

doi:10.1109/tns.2020.2981495

Cited by 15 publications

(2 citation statements)

References 27 publications

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“…In a recent publication 53 , Si/SiO2 NZFMR and EDMR were examined within a mean field model where hyperfine interactions were assumed to be due to a Gaussian distribution of classical nuclear spin vectors at each of the electron sites (i.e. shallow and deep states).…”

Section: Iv) Experimental Detailsmentioning

confidence: 99%

Extraction of isotropic electron-nuclear hyperfine coupling constants of paramagnetic point defects from near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum Liouville equation

Frantz

Harmon

McMillan

et al. 2020

Journal of Applied Physics

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We report on a method by which we can systematically extract spectroscopic information such as isotropic electron-nuclear hyperfine coupling constants from near-zero field magnetoresistance (NZFMR) spectra. The method utilizes a least squares fitting of models developed from the stochastic quantum Liouville equation. We applied our fitting algorithm to two distinct material systems: Si/SiO2 metal oxide field effect transistors (MOSFETs), and a-Si:H metal insulator semiconductor (MIS) capacitors. Our fitted results and hyperfine parameters are in reasonable agreement with existing knowledge of the defects present in the systems. Our work indicates that the NZFMR response and fitting of the NZFMR spectrum via models developed 2 from the stochastic quantum Liouville equation could be a relatively simple yet powerful addition to the family of spin-based techniques used to explore the chemical and structural nature of point defects in semiconductor devices and insulators. I.

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Section: Iv) Experimental Detailsmentioning

confidence: 99%

Extraction of isotropic electron-nuclear hyperfine coupling constants of paramagnetic point defects from near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum Liouville equation

Frantz

Harmon

McMillan

et al. 2020

Journal of Applied Physics

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“…Within the field of spin chemistry, spin relaxation plays a role in radical pair reactions [14], which has applications varying from organic electronic devices [15] to avian navigation [16]. Localized spin relaxation also plays a role in transport through disordered crystalline semiconductors [17,18] Spin relaxation of hopping spins has an older genesis: it was first studied in relation to muon spectroscopy [19][20][21][22][23][24]. The technique has seen much application in the study of magnetic materials.…”

Section: Introductionmentioning

confidence: 99%

Simulation and Theory of Classical Spin Hopping on a Lattice

2021

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The behavior of spin for incoherently hopping carriers is critical to understand in a variety of systems such as organic semiconductors, amorphous semiconductors, and muon-implanted materials. This work specifically examined the spin relaxation of hopping spin/charge carriers through a cubic lattice in the presence of varying degrees of energy disorder when the carrier spin is treated classically and random spin rotations are suffered during the hopping process (to mimic spin–orbit coupling effects) instead of during the wait time period (which would be more appropriate for hyperfine coupling). The problem was studied under a variety of different assumptions regarding the hopping rates and the random local fields. In some cases, analytic solutions for the spin relaxation rate were obtained. In all the models, we found that exponentially distributed energy disorder led to a drastic reduction in spin polarization losses that fell nonexponentially.

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A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

Anders

Lenahan

Harmon

et al. 2020

Journal of Applied Physics

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We discuss a new technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor (MOSFET) channel/gate dielectric interface. We call this technique near zero field spin-dependent charge pumping (NZF SDCP). It is based on a powerful MOSFET interface trap characterization measurement called charge pumping and related to an electrically detected magnetic resonance (EDMR) technique called SDCP. NZF SDCP and EDMR SDCP measurements are made on 4H-SiC MOSFETs, and we find that the introduction of nitrogen to the MOSFET interface can have a profound impact on the NZF SDCP response, which suggests that NZF SDCP may be useful to get atomic scale information about MOSFET interfaces such as defect identification. We also find that the NZF SDCP amplitude appears to saturate as a function of charge pumping frequency in most cases but not all. We make model calculations to explain this behavior. We also find that the NZF SDCP spectrum broadens with increasing charge pumping frequency, which may be an inherent NZF SDCP phenomenon. We hypothesize that NZF SDCP may also allow for experimental exploration of some magnetoresistance theories regarding interaction times between charge carriers and traps.

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Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO₂ MOSFETs

Cited by 15 publications

References 27 publications

Extraction of isotropic electron-nuclear hyperfine coupling constants of paramagnetic point defects from near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum Liouville equation

Extraction of isotropic electron-nuclear hyperfine coupling constants of paramagnetic point defects from near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum Liouville equation

Simulation and Theory of Classical Spin Hopping on a Lattice

A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

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Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO2 MOSFETs

Cited by 15 publications

References 27 publications

Extraction of isotropic electron-nuclear hyperfine coupling constants of paramagnetic point defects from near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum Liouville equation

Extraction of isotropic electron-nuclear hyperfine coupling constants of paramagnetic point defects from near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum Liouville equation

Simulation and Theory of Classical Spin Hopping on a Lattice

A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

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Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO₂ MOSFETs