Modeling of Nanophosphor-Coupled Porous Layers for Color Conversion in III-Nitride Micro-LED Arrays

Elahi, Asim M. Noor; Xu, Jian

doi:10.1007/s11664-022-09500-2

Cited by 3 publications

(2 citation statements)

References 29 publications

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“…However, QD aggregation can lead to uneven distribution on the surface and cause significant excitation light leakage, resulting in reduced quantum efficiency. Another strategy involves increasing the porosity of the chip surface or the color conversion layer, which not only improves excitation scattering but also facilitates effective QD dispersion within the pores, mitigating QD aggregation. − The porosity, proportional to the mean free path of excitation light, enhances the absorption and color conversion efficiency (CCE) of QDs. , Electrochemical (EC) etching, a gentle, environmentally friendly, and easier-to-operate technique compared to photolithography, utilizes anodization to create pores in the substrate by controlling the voltage, time, and other factors. In 2009, the use of oxalic acid (H 2 C 2 O 4 ) as an electrolyte for EC etching was introduced, allowing for pore generation .…”

Section: Introductionmentioning

confidence: 99%

Nanostructure Control of GaN by Electrochemical Etching for Enhanced Perovskite Quantum Dot LED Backlighting

Huang

Hong

Liu

2023

ACS Appl. Mater. Interfaces

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Upgraded technology has realized miniaturization and promoted transformation in each field. Miniaturized light-emitting diode (LED) chips enable higher resolution and create a full sense of immersion in displays. Porous GaN is a structure that can reduce excitation light leakage and enhance the light conversion efficiency. Perovskite quantum dots with the highest optical density as candidate materials for loading in pores can significantly decrease the aggregation phenomenon and increase the path of light absorption. Here, the porous tunability is explored by electrochemical etching under a range of voltages, concentrations, and etching times with acid and base electrolytes, such as oxalic acid and potassium hydroxide. Based on scanning electron microscopy images, the distribution of the pores and the morphology of pore channels can be distinguished under acid and base etching. Larger pore sizes and distorted channels (∼680 nm) are presented on the oxalic acid-etched GaN chip. In contrast, smaller pore sizes and straight-deeper channels (∼5650 nm) are demonstrated on the GaN by potassium hydroxide etching. Therefore, the hybrid nanostructure is etched by oxalic acid and potassium hydroxide, separately. The green and red light conversion efficiencies of perovskite quantum dots pumped by a blue LED can be improved by 3 and 10 times, respectively, resulting in a color gamut of approximately 124%.

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Section: Introductionmentioning

confidence: 99%

Nanostructure Control of GaN by Electrochemical Etching for Enhanced Perovskite Quantum Dot LED Backlighting

Huang

Hong

Liu

2023

ACS Appl. Mater. Interfaces

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“…Recently, some nanostructures were applied on the white LED packaging to improve the color conversion efficiency, directionality, and spontaneous emission rate (SER) [13][14][15][16][17][18][19][20][21][22]. Quantum dot (QD) material is a type of good phosphor for white LEDs because of its high quantum yield, narrow spectral width, and high SER [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Effect of Amorphous Photonic Structure Surface Mounted on Luminous Performances of White LED

Huang¹,

Chen

Nie

et al. 2022

Crystals

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We fabricated amorphous photonic structures (APSs) with different periods and hole diameters. The GaN-based white light emitting diodes (LEDs) at nominal correlated color temperatures (CCTs) of 5000 and 6000 K were surface mounted by these APSs. The electroluminescence (EL) measurements showed less luminous efficiency (LE) and higher CCT than the ones of the virginal white LEDs. However, the LEs of many APS-mounted white LEDs increased compared to white the LEDs without APSs at the same CCTs. A finite-difference time-domain (FDTD) simulation was carried out on the ASPs surface-mounted white LEDs and bidirectional scattering distribution functions (BSDFs) of different emissions were transferred to a Monte Carlo ray tracing simulation. The simulated LEs and CCTs conformed well to the experimental ones. The effects of the blue emission transmission and phosphor concentration were simulated to predict the absolute LE enhancement methods for white LEDs. At last, the hopeful APSs for high Les’ general lighting were discussed.

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4‐4: High PPI MicroLED display driver circuit and device structure

Zhao,

Guo

et al. 2023

Symp Digest of Tech Papers

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This paper proposes a new type of display driver circuit and TFT device structure, studies the brightness control technology of high PPI Micro LED display, uses the inverter PWM driver module loaded in the traditional internal compensation driver circuit, when the low gray scale display, By triggering PWM module, the PWM is used to further divide the low gray scale under PAM mode again, so as to increase the gray level. Meanwhile, the introduction of Micro LED reverse NMOS and PMOS laminator TFT increases the PPI from 233 to 314 retinal level. Realized the Micro LED HD display and low brightness controllable demand.

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Modeling of Nanophosphor-Coupled Porous Layers for Color Conversion in III-Nitride Micro-LED Arrays

Cited by 3 publications

References 29 publications

Nanostructure Control of GaN by Electrochemical Etching for Enhanced Perovskite Quantum Dot LED Backlighting

Nanostructure Control of GaN by Electrochemical Etching for Enhanced Perovskite Quantum Dot LED Backlighting

Effect of Amorphous Photonic Structure Surface Mounted on Luminous Performances of White LED

4‐4: High PPI MicroLED display driver circuit and device structure

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