Modeling of microwave top illuminated PIN photodetector under very high optical power

Ultrawide-band/high-frequency photodetectors

“…Nonlinearity causes a harmonic power which degrades the carrier-to-noise ratio in analog systems. High-speed-PD nonlinearity under high-power illumination has been investigated numerically [50]- [54] and experimentally [29], [55]- [61]. These studies indicated that nonlinearity is caused by a decrease in the electric field and then a lowering of the carrier velocity due to a space-charge effect or an electric-field screening effect.…”

Characterization of high‐photocurrent and high‐speed INP‐based uni‐traveling‐carrier photodiodes at 1.55‐μm wavelength

“…In order to overcome these difficulties, a semi‐analytical method, which combines the advantages of using analytical method and numerical optimization method, for extracting the model parameters of UTC‐PD is proposed in this paper. Comparing with previous literatures , current method has the following advantages: The equivalent circuit model is developed basing on actual device structure and physics. The dipole‐doped structure at the InGaAs/InP heterostructure interface has been taken into account in the equivalent circuit model to simulate its effectiveness on suppressing the current blocking effect . Most of the circuit component parameters, including parasitic and intrinsic parameters, can be extracted directly from a set of closed‐form expressions based on the measured reflection coefficients ( S 22 ) and frequency responses ( S 21 ) of devices. Only one parameter (capacitance of the dipole‐doped structure C dd ) cannot be extracted directly by using analytical method.…”

Dilute nitride-based photodetectors : fabrication, characterization and performance

“…However, the external injection conditions, dominated by the change of light spot size, axial offset, and tilt angles, contribute to the insertion loss of optical power [35,36].…”