Modeling of kink-effect in RF behaviour of GaN HEMTs using ASM-HEMT model

Ahsan, Sheikh Aamir; Ghosh, Sudip; Khandelwal, Sourabh; Chauhan, Yogesh Singh

doi:10.1109/edssc.2016.7785299

Cited by 25 publications

(18 citation statements)

References 13 publications

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“…With the aim of enabling microwave engineers to exploit advanced transistor technologies at their best, increasing attention is being given to the investigation of the kink effects in the output reflection coefficient (S 22 ) and the short-circuit current-gain (h 21 ) of solid-state electronic devices made with different semiconductor materials, like silicon (Si), gallium arsenide (GaAs), and gallium nitride (GaN) [1][2][3][4][5][6][7][8][9][10][11][12][13]. The kink in S 22 consists in the change of the concavity of the function Im(S 22 ) versus Re(S 22 ) (i.e., from convex to concave and vice versa), while the kinks in h 21 consist of peaks that are detectable by plotting the magnitude of h 21 in dB versus the frequency on a log scale.…”

Section: Introductionmentioning

confidence: 99%

A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

et al. 2018

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The aim of this feature article is to provide a deep insight into the origin of the kink effects affecting the output reflection coefficient (S22) and the short-circuit current-gain (h21) of solid-state electronic devices. To gain a clear and comprehensive understanding of how these anomalous phenomena impact device performance, the kink effects in S22 and h21 are thoroughly analyzed over a broad range of bias and temperature conditions. The analysis is accomplished using high-frequency scattering (S-) parameters measured on a gallium-nitride (GaN) high electron-mobility transistor (HEMT). The experiments show that the kink effects might become more or less severe depending on the bias and temperature conditions. By using a GaN HEMT equivalent-circuit model, the experimental results are analyzed and interpreted in terms of the circuit elements to investigate the origin of the kink effects and their dependence on the operating condition. This empirical analysis provides valuable information, simply achievable by conventional instrumentation, that can be used not only by GaN foundries to optimize the technology processes and, as a consequence, device performance, but also by designers that need to face out with the pronounced kink effects of this amazing technology.

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Section: Introductionmentioning

confidence: 99%

A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

et al. 2018

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“…And a high g m has been usually found to be mainly responsible for this phenomenon. In line with this theory, GaN HEMTs, especially for those with larger gate width, tend to show prominence of the kink effect in S 22 , since they inherently exhibit high g m suitable for high power applications …”

Section: Resultsmentioning

confidence: 71%

“…In line with this theory, GaN HEMTs, especially for those with larger gate width, tend to show prominence of the kink effect in S 22 , since they inherently exhibit high g m suitable for high power applications. [33][34][35] To further assess the soundness of the model parameter extraction method, the scalability of the intrinsic Yparameters for the 4 × 75 μm and 4 × 200 μm devices is investigated. In general, when the model parasitic elements are well identified, the intrinsic Y-parameters of the device would scale linearly with periphery.…”

Section: Resultsmentioning

confidence: 99%

A reliable and efficient small‐signal parameter extraction method for GaN HEMTs

Yong-bo

Luo³

et al. 2018

Int J Numerical Modelling

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In this paper, a reliable and efficient parameter extraction method for GaN high electron mobility transistor (HEMT) small-signal models has been proposed. By utilizing parameter scanning method, the initial values of the extrinsic elements are first extracted from the cold pinch-off and cold unbiased measurement conditions, respectively. An iterative optimization algorithm is employed then to optimize the extrinsic elements. This scanning and iteration combined algorithm based on a direct extraction method of extrinsic elements can reduce the impact of the approximation error, which makes the determined values of the small-signal parameters more reliable. The extraction flow has been realized in a Matlab program for efficiency. A 16-element small-signal equivalent circuit model (SSECM) for GaN HEMTs has been employed, and the new parameter extraction method has been validated by comparing the simulated small-signal S-parameters with the measured data from 0.1 GHz to 40 GHz for two different device dimensions.

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“…In order to increase attention for high‐temperature and high‐power applications at high frequencies, the kink effects are investigated in the output reflection coefficient (S 22 ) and the short‐circuit current gain (h 21 ) to be shown how these phenomena affect the applications of electronic devices . At first, the S parameters are analyzed completely that S 11 and S 22 on Smith charts and S 21 and S 12 on polar plots are reported .…”

Section: Resultsmentioning

confidence: 99%

An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics

Jaghargh

Orouji

2020

Int J Numerical Modelling

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In this paper, an AlGaN/GaN HEMT with a reversed pyramidal channel layer (RPC‐HEMT) is proposed. The main purpose of the paper is an increase in the breakdown voltage of a conventional HEMT (C‐HEMT) to be suitable in high‐power applications. In the RPC‐HEMT, a reverse pyramidal channel layer in the high electric field traps the energetic carriers that cause the transistors to break. The steps decrease the carrier concentration across the two‐dimensional electron gas (2DEG) channel layer, especially under the gate contact. Therefore, the critical electrical field reduces by the uniform division of carrier mass and improves the breakdown voltage of the RPC‐HEMT by 32%. Besides, the maximum output power density of the new transistor improves compared with the conventional one. In addition, the radio frequency (RF) characteristics such as the cutoff frequency and maximum oscillation frequency of the RPC‐HEMT improve by the decline in the gate‐source capacitance. This article provides kink effects with the output reflection coefficient (S22) and the short‐circuit current gain (h21) to show how this anomalous phenomenon affects high‐frequency performance of devices. Finally, the proposed method makes the RPC‐HEMT appropriate for high‐power and high‐frequency applications.

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Modeling of kink-effect in RF behaviour of GaN HEMTs using ASM-HEMT model

Cited by 25 publications

References 13 publications

A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

A reliable and efficient small‐signal parameter extraction method for GaN HEMTs

An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics

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