Modeling of inversion layer capacitance of III-V double gate MOSFETs using a neural network-based regression technique
Subir Kumar Maity,
Soumya Pandit
Abstract:This work presents a data-driven regression model of inversion layer capacitance of double gate III-V channel MOSFETs implemented using an artificial neural network. The training dataset is generated using a Schroedinger-Poisson solver for different channel thicknesses, carrier effective masses, oxide thickness, barrier height, and a wide range of gate bias voltages. The neural network predicted capacitance value is compared with Schroedinger-Poisson solver data and a physics-based analytical model result. The… Show more
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