Modeling of high voltage devices for ESD event simulation in SPICE

Zhou, Yuanzhong; Salcedo, Javier A.; Hajjar, Jean-Jacques

doi:10.1016/j.mejo.2011.12.010

Cited by 8 publications

(2 citation statements)

References 5 publications

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“…In all cases, the model equations must be numerically well conditioned, e.g., lacking singularities, so that convergence problems do not arise during circuit simulation [16], [52].…”

Section: Compact Modelsmentioning

confidence: 99%

Compact Models for Simulation of On-Chip ESD Protection Networks

Rosenbaum,

Huang,

Drallmeier

et al. 2024

IEEE Trans. Electron Devices

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Technology scaling and increased data rates make it near impossible to achieve historic levels of electrostatic discharge (ESD) robustness. This heightens the need for pre-Si verification that a design's ESD level is above a critical value, below which the yield loss and the number of field returns are expected to be high. Transient simulation plays a role in ESD design verification and requires the availability of accurate compact models of the various semiconductor devices, which lie along the discharge path. The compact models included in a foundry process design kit (PDK) are not accurate at ESD current levels. This article describes compact models that have been developed in the ESD device research community. It reviews the measurements used to characterize ESD protection devices and acquire data for model parameter extraction. It is concluded that obtaining accurate measurement data is challenging and this impedes the widescale adoption of ESD compact models.

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“…In all cases, the model equations must be numerically well conditioned, e.g., lacking singularities, so that convergence problems do not arise during circuit simulation [16], [52].…”

Section: Compact Modelsmentioning

confidence: 99%

Compact Models for Simulation of On-Chip ESD Protection Networks

Rosenbaum,

Huang,

Drallmeier

et al. 2024

IEEE Trans. Electron Devices

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“…In most of these papers, the failure level is determined through the time to failure as described by Wunch & Bell [27], [28]. Some compact modeling approaches to predict thermal effects have been proposed in [29], [30], [31], [32] where equivalent Spice models are used to reproduce thermal effects. The proposed models of these articles are able to represent the transient behavior of selfheating.…”

Section: Introductionmentioning

confidence: 99%

Frequency Based Method Investigation to Extract an ESD Protection Dynamic SPICE Model From TLP Measurement

Escudié

Caignet

Nolhier

et al. 2022

IEEE Trans. Electromagn. Compat.

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In order to ensure reliability of systems early in the design phase, it is becoming crucial to have models able to predict the behavior of systems exposed to ElectroStatic Discharge (ESD). This is an increasing necessity since the number of embedded electronic products is growing and since they are employed in applications where people's safety is a requirement, such as automotive and aeronautic applications. Until now, quasi-static models of protection devices have succeeded in providing fairly good results in failure predictions (mainly hard failures). Today, the increased frequency range of such devices requires dynamic models able to reproduce their transient behavior. In this paper, we investigate if conventional methods for modeling linear devices, generally used in the frequency domain, could be used to obtain an equivalent frequency model for ESD protection devices, which exhibit non-linear behavior. A methodology to extract an ESD protection SPICE model from Transmission Line Pulse (TLP) measurements to address transient and frequency simulation is proposed and detailed. We demonstrate that, in well-defined conditions, such frequency models can give accurate results to predict overshoots related to protection device triggering delays. Validation of the models is performed under TLP and Human Metal Model (HMM) conditions on three off-the-shelf devices.

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