Modeling of High-Current Polycrystalline Silicon Thin Film Transistors by Incorporating Buried Electrode

Abstract

For display applications, high current and large on/off current ratio are pursued for driving and switching transistors. In this article, a thin film transistor (TFT) device incorporating a buried electrode is proposed, which enables to increase the driving current due to the reduction of the channel length, with the channel length only at the drain side. This lateral short channel TFT enables to increase the on-current when maintaining the field Accepted manuscript / Final version 2 effect mobility, in comparison to our experimental short-channel vertical TFT structure. Another advantage of the proposed structure lies in the suppression of the Schottky barrier at the source and drain contacts when using high-work-function source/drain contacts for an N-type TFT, with an increased on/off current ratio reaching approximately 10 6 . The suppression of Schottky barrier at source/drain has been verified by the contact resistance measurements. Even though high driving current is obtained, the off-current is still high due to the weakened electric field at source/drain sides and needs to be further optimized.