Modeling of gate underlap junctionless double gate MOSFET as bio-sensor

Ajay, Ajay; Narang, Rakhi; Saxena, Manoj; Gupta, Mridula

doi:10.1016/j.mssp.2017.08.008

Cited by 39 publications

(24 citation statements)

References 33 publications

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“…where value of V 1 , V 2 , V 3 , and V 4 are taken from 9(a) to 9(d). The drain current in the saturation region is intended by replacing V ds with V ds,Sat, given by Narang et al 51,52 V ds,Sat ¼…”

Section: Drain Currentmentioning

confidence: 99%

Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET)

Sharma

Nath

Deswal³

et al. 2023

Int J Numerical Modelling

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This study's objectives are to deliver a relative analysis of non‐uniformly doped (NUD) and uniformly doped Dual Metal High‐K Schottky nanowire FET (DM‐HK‐SNWFET). Surface potential, subthreshold current, subthreshold swing, and drain current have been expressed and analyzed by resolving 2D Poisson's equation with suitable boundary conditions. The analog performance of the device is verified by examining cut‐off frequency (fT), trans‐conductance frequency product (TFP), gain frequency product (GFP), and gain trans‐conductance frequency product (GTFP). The results show suitable RF circuit parameters with a high switching ratio (≈3 × 109) and low subthreshold swing (61 mV/decade) for NUD‐DM‐HK‐SNWFET. Additionally, linearity frequency of merits (FOMs) and distortion performance are also studied by numerically calculating higher order voltage and current intercept point (VIP2, VIP3, IIP3, IMD3); 1‐dB compression point and Harmonics distortions (HD2 and HD3) using transconductance (gm1) along with its higher derivatives gm2 and gm3. These parameters exhibit high‐level linearity and low‐level distortion at zero crossover points in NUD‐DM‐HK‐SNWFET, making it a better contender for low‐power and high‐performance applications.

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Section: Drain Currentmentioning

confidence: 99%

Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET)

Sharma

Nath

Deswal³

et al. 2023

Int J Numerical Modelling

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“…The simulation results proved that the optimization of gate metal work functions enhances the sensitivity of the biosensor. The sensitivity of different DG-MOSFET-based biosensors is discussed in [ 16 , 17 ]. Different FET-based biosensors are reported in [ 18 , 19 , 20 , 21 , 22 , 23 , 24 ].…”

Section: Introductionmentioning

confidence: 99%

A Novel Dielectric Modulated Gate-Stack Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor-Based Sensor for Detecting Biomolecules

Chowdhury

Appasani

et al. 2023

Sensors

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In this article, the performance of n-type junctionless (JL) double-gate (DG) MOSFET-based biosensors with and without gate stack (GS) has been studied. Here, the dielectric modulation (DM) method is applied to detect biomolecules in the cavity. The sensitivity of n-type JL-DM-DG-MOSFET and n-type JL-DM-GSDG-MOSFET-based biosensors have also been evaluated. The sensitivity (ΔVth) improved in JL-DM-GSDG MOSFET/JL-DM-DG-MOSFET-based biosensors for neutral/charged biomolecules is 116.66%/66.66% and 1165.78%/978.94%, respectively, compared with the previously reported results. The electrical detection of biomolecules is validated using the ATLAS device simulator. The noise and analog/RF parameters are compared between both biosensors. A lower threshold voltage is observed in the GSDG-MOSFET-based biosensor. The Ion/Ioff ratio is higher for DG-MOSFET-based biosensors. The proposed GSDG-MOSFET-based biosensor demonstrates higher sensitivity than the DG-MOSFET-based biosensor. The GSDG-MOSFET-based biosensor is suitable for low-power, high-speed, and high sensitivity applications.

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“…Ajay etal. [20] proposed a junctionless Double gate MOSFET with an underlapped gate at the source and drain in two different structures for binding molecules.This structure is used as biosensor in biomedical applications for detecting various diseases. Ajay et al [21] designed a device junctionless Double gate MOSFET using dielectric modulation technique for detecting biomolecules.…”

Section: Introductionmentioning

confidence: 99%

18nm n-channel and p-channel Dopingless Asymmetrical Junctionless DG-MOSFET: Low Power CMOS Based Digital and Memory Applications

Mendiratta

Tripathi

2021

Silicon

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In this paper, an 18nm dopingless asymmetrical junctionless (AJ) double gate (DG) MOSFET has been designed for suppressed short channel effects (SCEs) for low power applications. A desired ON and OFF state current ratio with subthreshold performance parameters under limit, is the major focus of the proposed transistor. Different sensitivity parameters of dopingless AJ DG MOSFET such as drain extension, length of gate overlapping and oxide thickness are compared with the AJ DG MOSFET with doped channel region. The ON-state current obtained is 3.80 x 10 −6 A/μm with reduced OFF-state leakage current up to1.37 x 10 −17 A/μm. The subthreshold slope (SS) and drain induced barrier lowering (DIBL) of the device obtained are 59.5 mV/decade and 10.5 mV/V respectively. Temperature analysis of proposed device at various temperature such as 250 K,300 K, 350 K and 400 K shows a small variation in OFF-state current (<15%). Additionally, a p-channel AJ DG MOSFET along with n-channel AJ DG MOSFET are designed and their performance is evaluated for CMOS inverter circuit and 6T SRAM cell. All the design and analysis has been done with a 2D/3D Visual TCAD device simulator.

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Modeling of gate underlap junctionless double gate MOSFET as bio-sensor

Cited by 39 publications

References 33 publications

Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET)

Analytical analysis and linearity performance of dual metal high‐K Schottky nanowire FET(DM‐HK‐SNWFET)

A Novel Dielectric Modulated Gate-Stack Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor-Based Sensor for Detecting Biomolecules

18nm n-channel and p-channel Dopingless Asymmetrical Junctionless DG-MOSFET: Low Power CMOS Based Digital and Memory Applications

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