Abstract:Wide bandgap (WBG) semiconductors such as GaN and SiC are emerging as promising alternatives to Si for new generation of high efficiency power devices. GaN has attracted a lot of attention recently because of its superior material properties leading to potential realization of power transistors for high power, high frequency, and high temperature applications. In order to utilize the full potential of GaN-based power transistors, proper device modeling is essential to verify its operation and improve the desig… Show more
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