Modeling of FinFET Self-Heating Effects in multiple FinFET Technology Generations with implication for Transistor and Product Reliability

Sagong, Hyun Chul; Choi, Kiho; Kim, J.; Jeong, Tae-Young; Choe, Minhyeok; Shim, Hyungjoon; Kim, W.; Park, Jung O.; Shin, Susanna; Pae, Sangwoo

doi:10.1109/vlsit.2018.8510657

Cited by 18 publications

(4 citation statements)

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“…However, the experimental study of the real impact of SHE in the circuit operation case is still very limited. Recent literatures [21]- [23] have reported that self-heating may be mitigated under highfrequency operation in realistic uses. However, further study is still strongly needed to understand the impact of SHE in advanced technology nodes with new device structures and channel materials.…”

Section: Figure 2 Trend Of She Related Factors In Further Advanced Nodes (A)mentioning

confidence: 99%

Impact of Self-Heating Effect on Transistor Characterization and Reliability Issues in Sub-10 nm Technology Nodes

Zhao

2019

IEEE J. Electron Devices Soc.

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FinFET and fully depleted silicon-on-insulator (FDSOI) structures could further improve transistor's performance and, however, also introduce some new problems, especially the increasingly severer self-heating effect (SHE). In this paper, by utilizing the ultra-fast sub-1 ns measurement technique, I-V characteristics of FinFETs and FDSOI devices at different switch speeds are obtained. Furthermore, dynamic SHE phenomena as well as the time-resolved channel temperature change during transistor's switch on and off are able to be experimentally observed. And, more accurate device parameters like ballistic transport efficiency are extracted by the ultra-fast measurements. Moreover, it is experimentally confirmed that several nanoseconds are required to heat up the channel of transistors by the direct electrical characterization and, therefore, in sub-10 nm devices, SHE might be alleviated under high frequency/speed operations.

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Section: Figure 2 Trend Of She Related Factors In Further Advanced Nodes (A)mentioning

confidence: 99%

Impact of Self-Heating Effect on Transistor Characterization and Reliability Issues in Sub-10 nm Technology Nodes

Zhao

2019

IEEE J. Electron Devices Soc.

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“…With the continuous miniaturization of integrated circuits, high-density devices generate a significant amount of Joule heat during continuous operation. − Therefore, effectively dissipating excessive heat and ensuring stable operation within a safe temperature range is a critical challenge for modern semiconductor integrated circuits (ICs). − During the operation of the device, charge transport commonly occurs in the semiconductor bottom layer, which contacts the underlying oxide. − The Joule heat generated during the device operation process causes a typical negative differential resistance (NDR) effect, which degrades the electrical performance of the device, including saturation current, carrier mobility, power density, etc. − Therefore, addressing the question of how to enhance the heat dissipation of the device to achieve the intrinsic electrical performance of the channel material is of utmost importance. , …”

Section: Introductionmentioning

confidence: 99%

Self-Heating Effect in a MoS₂ Field-Effect Transistor and Improved Heat Dissipation by the BN Capping Layer

Dang,

Huangfu,

Hossain

et al. 2024

ACS Appl. Electron. Mater.

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The inefficient heat dissipation in two-dimensional (2D) semiconductor-based field-effect transistors (FETs) hampers their electrical performance and reliability. In this study, we address this issue by experimentally investigating the factors influencing the self-heating of MoS 2based 2D FETs and enhancing the heat dissipation of MoS 2 -based 2D FETs using a high thermal conductivity BN capping layer. The results demonstrate a significant reduction in the negative differential resistance (NDR) with 2D BN encapsulation, leading to improved electrical properties, such as increased saturation current density (average increase of 15.42%, maximum increase of 42%), and device saturation power density (average increase of 15.77%). This research sheds light on the self-heating effect in 2D FET devices and provides valuable insights for enhancing heat dissipation in 2D FETs through the use of high thermal conductivity insulator capping materials.

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“…Additional problems arise in designs such as ultra-thin body silicon on insulator (UTB SOI) devices. In SOI FinFETs the oxide insulator's thermal conductivity is much lower than that of standardFinFETs [1]. As technology advances with scaling, the Fins continue to become taller and thinner, escalating the heat dissipation problem.…”

Section: Introductionmentioning

confidence: 99%

Mitigation of Thermal Stability Concerns in FinFET Devices

2022

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Here, we developed a procedure for mitigating thermal hazards in packaged FinFET devices. A monitoring system was installed into devices, based on self-heating impact analysis in the system and device levels, to allow for the observation and alerting of chip temperature and reliability risks. A novel algorithm for reducing measurement noise by means of temperature fluctuation compensation and the filtering of invalid data is presented and demonstrated on packaged devices. The results presented in this work show that the proposed techniques make exceptional improvements to sensory accuracy. Using this methodology enables the mitigation of thermal concerns in systems, including large data servers, and accelerates development of smart resource allocation formations.

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Modeling of FinFET Self-Heating Effects in multiple FinFET Technology Generations with implication for Transistor and Product Reliability

Cited by 18 publications

References 1 publication

Impact of Self-Heating Effect on Transistor Characterization and Reliability Issues in Sub-10 nm Technology Nodes

Impact of Self-Heating Effect on Transistor Characterization and Reliability Issues in Sub-10 nm Technology Nodes

Self-Heating Effect in a MoS₂ Field-Effect Transistor and Improved Heat Dissipation by the BN Capping Layer

Mitigation of Thermal Stability Concerns in FinFET Devices

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Modeling of FinFET Self-Heating Effects in multiple FinFET Technology Generations with implication for Transistor and Product Reliability

Cited by 18 publications

References 1 publication

Impact of Self-Heating Effect on Transistor Characterization and Reliability Issues in Sub-10 nm Technology Nodes

Impact of Self-Heating Effect on Transistor Characterization and Reliability Issues in Sub-10 nm Technology Nodes

Self-Heating Effect in a MoS2 Field-Effect Transistor and Improved Heat Dissipation by the BN Capping Layer

Mitigation of Thermal Stability Concerns in FinFET Devices

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Product

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Self-Heating Effect in a MoS₂ Field-Effect Transistor and Improved Heat Dissipation by the BN Capping Layer