Modeling of facet formation in SiC bulk crystal growth

Growth kinetics study in halide chemical vapor deposition of SiC

“…First is the physical vapor transport (PVT) method which has been so far the most mature, robust, and economical SiC bulk-growth technique. This method, however, has a drawback of poor control over the crystal [6][7][8]. This results in low yield of high resistivity material and short carrier lifetimes [9].…”

Theoretical aspects of the growth of a non-Kossel crystal from vapours: the role of advacancies

“…All of this, as was mentioned also by Chernov in his classical papers, 40 makes it of utmost importance to modify the existing theory of crystal growth to describe the growth of multicomponent non-Kossel crystals. Several valuable studies and models on the growth in multicomponent systems [41][42][43][44] mostly describe the growth of particular crystals, growth regimes and methods in demand in modern technology and thus cannot be used directly to describe the growth of an arbitrary crystal. There are also important theoretical papers on the growth of arbitrary multicomponent crystals [45][46][47][48] or due to chemical reactions, 49 but there are still many effects and dependencies that may greatly affect the growth rate and have not yet been analysed for multicomponent cases.…”

Advances in numerical simulation of wide-bandgap bulk crystal growth

“…In Ref. [25], a model of SiC crystal faceting was developed and the crystal shape evolution was simulated accounting for facet formation.…”