Modeling of enhanced 1/ƒ noise in TFT with trap charges

A Surface Potential Based Organic Thin-Film Transistor Model for Circuit Simulation Verified With DNTT High Performance Test Devices

“…The model Eqn. (20) can reproduce the drain current over a wide range of trap densities using appropriate values of g c1 , g c2 , E 1 , and E 2 , thus confirming the validity of the developed method [16]. Please notice that tail states, in addition to their effect on the subthreshold currents, also strongly affect the currents above threshold at high V gs .…”

“…Figs. [16][17][18][19] confirm that the structure dependent modeling, with the resulting additional pseudo-2D resistances at source and drain, is required for accurate prediction of electrical behavior. Therefore, it is very important to additionally consider the structural OTFT effects via the resistance modeling for reliable organic electronic circuit design.…”

“…The measured results in Figs. [16][17][18][19] are well reproduced by considering the accurate Poisson equation for undoped semiconductors, trap effects, floating body effects, PooleFrenkel mobility models, and additionally the OTFT-structure effects on the resistance modeling. Figs.…”

Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO2 interface defects

“…These observations are explained in the energy band-diagram of the SiC channel as shown in Fig. 4a and b [23]. The maximum carrier concentration is considered to be at the electron quasi-Fermi level E Fn .…”

Benchmarking of a surface potential based organic thin-film transistor model against C<inf>10</inf>-DNTT high performance test devices

“…In this paper, we report on the development of a surfacepotential based compact model for OTFTs including the both tail and deep trap states across the band gap [7][8][9]. The drain current vs. gate voltage (I ds vs. V gs ) fitting results are benchmarked with measured data from dinaphtho thieno thiophene (C 10 -DNTT) based high-performance p-OTFT test devices [10].…”