Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise

Abstract

The intense development and study of resistive random access memory (RRAM) devices has opened a new era in semiconductor memory manufacturing. Resistive switching and carrier conduction inside RRAM films have become critical issues in recent years. Electron trapping/ detrapping behavior is observed and investigated in the proposed contact resistive random access memory (CR-RAM) cell. Through the fitting of the space charge limiting current (SCLC) model, and analysis in terms of the random telegraph noise (RTN) model, the temperature-dependence of resistance levels and the high-temperature data retention behavior of the contact RRAM film are successfully and completely explained. Detail analyses of the electron capture and emission from the traps by forward and reverse read measurements provide further verifications for hopping conduction mechanism and current fluctuation discrepancies.

Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon

“…The bulk-limited mechanism depends on the electric characteristics of dielectric material itself and can be divided into different modes, including FowlerNordheim tunneling, Pool-Frenkel model (trap-assisted thermionic emission), and trap-assisted space-charge-limited current (trap-assisted SCLC). 25 For our device with 0.4 mm diameter, its I-V curve is fitted with all aforementioned models, and the best fitting is shown in Fig. 3(d), in which the I-V curve is in a double natural logarithmic plot.…”

Array-level stability enhancement of 50nm AlxOy ReRAM

“…In [17], an explanation for why RTN affects HRS more than LRS is attributed to the difference in V o density in the CF. Also, in [17,20], re-writing the memory cell is shown to permanently change the RTN behavior, in some cases, RTN behavior can disappear [19].…”

“…RTN studies conducted specifically on ReRAM devices [8,[17][18][19][20] also characterize T e and T c . In [18] it is observed that V o 's near the conductive filament, which is composed of V o 's, is a major factor to cause RTN and retention loss.…”

Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices

“…However, before the commercial exploitation of this emerging technology, two major concerns need to be solved: device endurance and switching variability. In order to determine the reliability and stochastic variability of the memory performance, a better understanding of random telegraph noise (RTN) in RRAM cells is required, as it can cause severe operation or read errors [2][3][4][5][6][7][8][9][10][11][12][13][14].…”