Modeling of Electron Beam Charging of an Insulating Layer on a Silicon Substrate

Ohya, Kaoru; Kuwada, Hideaki

doi:10.1380/ejssnt.2011.112

Cited by 3 publications

(1 citation statement)

References 10 publications

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“…[12][13][14] Besides that, some Monte-Carlo simulators were developed to simulate full 3D geometries and charging models were also incorporated. [15][16][17][18][19] However, the long calculation times of these simulators render them quite impractical for realistic scenarios.…”

Section: Introductionmentioning

confidence: 99%

Model improvements to simulate charging in scanning electron microscope

Arat

Klimpel

Hagen

2019

J. Micro/Nanolith. MEMS MOEMS

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Background: Charging of insulators is a complex phenomenon to simulate since the accuracy of the simulations is very sensitive to the interaction of electrons with matter and electric fields. Aim: In this study, we report model improvements for a previously developed Monte-Carlo simulator to more accurately simulate samples that charge. Approach: The improvements include both modeling of low energy electron scattering by first-principle approaches and charging of insulators by the redistribution of the charge carriers in the material with an electron beam-induced conductivity and a dielectric breakdown model. Results: The first-principle scattering models provide a more realistic charge distribution cloud in the material and a better match between noncharging simulations and experimental results. The improvements on the charging models, which mainly focus on the redistribution of the charge carriers, lead to a smoother distribution of the charges and better experimental agreement of charging simulations. Conclusions: Combined with a more accurate tracing of low energy electrons in the electric field, we managed to reproduce the dynamically changing charging contrast due to an induced positive surface potential.

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Section: Introductionmentioning

confidence: 99%

Model improvements to simulate charging in scanning electron microscope

Arat

Klimpel

Hagen

2019

J. Micro/Nanolith. MEMS MOEMS

View full text Add to dashboard Cite

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Simulation of insulating-layer charging on a conductive substrate irradiated by ion and electron beams

Ohya

2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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A comparative study of the charging characteristics of insulating thin layers on a conductive substrate by ion and electron beam irradiation was performed by simulation. A 100-nm or thinner SiO2 layer on a Si substrate was irradiated with 30-keV He, Ne, and Ga ions and 0.5–10 keV electrons. Most of the He ions and high-energy (>4 keV) electrons passed through the 100-nm-thick layer and reached the substrate. This strongly relaxed the positive charging effect of the ions and caused slightly positive charging by the electrons. Because of the negligible contribution of projectile charges, the charging is solely attributed to secondary electron (SE) emission. For Ga ions and low-energy (<1.5 keV) electrons, positive charging was substantially enhanced because of the successive injection of positive ions into the layer and the emission of excess SEs over the injecting electrons (SE yield > 1), respectively. For Ne ions, positive charging proceeded gradually even when all the SEs were reabsorbed by the surface, as was the case for Ga ions. However, positive charging with low-energy electrons reached a steady state as a result of a balance between the injected electrons and the ejecting SEs. A transition from positive to negative charging occurred for intermediate-energy electrons because the SE yield was less than unity. When layer thickness was decreased, positive charging by Ne and Ga ions was suppressed because of a decrease in the number of accumulated charges. However, positive charging with high-energy electrons subsequently changed to negative charging.

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Model improvements to simulate charging in SEM

Arat

Klimpel

Hagen

2018

Metrology, Inspection, and Process Control for Microlithography XXXII

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Charging of insulators is a complex phenomenon to simulate since the accuracy of the simulations is very sensitive to the interaction of electrons with matter and electric fields. In this study, we report model improvements for a previously developed Monte-Carlo simulator to more accurately simulate samples that charge. The improvements include both modelling of low energy electron scattering and charging of insulators. The new first-principle scattering models provide a more realistic charge distribution cloud in the material, and a better match between non-charging simulations and experimental results. Improvements on charging models mainly focus on redistribution of the charge carriers in the material with an induced conductivity (EBIC) and a breakdown model, leading to a smoother distribution of the charges. Combined with a more accurate tracing of low energy electrons in the electric field, we managed to reproduce the dynamically changing charging contrast due to an induced positive surface potential.

show abstract

Modeling of Electron Beam Charging of an Insulating Layer on a Silicon Substrate

Cited by 3 publications

References 10 publications

Model improvements to simulate charging in scanning electron microscope

Model improvements to simulate charging in scanning electron microscope

Simulation of insulating-layer charging on a conductive substrate irradiated by ion and electron beams

Model improvements to simulate charging in SEM

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