Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode

Marković, Lovro; Knežević, Tihomir; Suligoj, Tomislav

doi:10.23919/mipro48935.2020.9245134

Cited by 1 publication

(3 citation statements)

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“…A TCAD model of a basic Ge-on-Si heterostructure has been previously developed [6]. Further diffusion simulations, after predeposition of Ga and amorphous B, have been performed using Sentaurus Process simulation software, following reported process parameters and fabrication steps [1].…”

Section: Model and Parametersmentioning

confidence: 99%

“…However, such a barrier is much higher than any theoretical or experimental value. According to Schottky-Mott rule, based on the difference in Al workfunction and Ge electron affinity, the theoretical barrier height between Al and Ge is ɎB § 0.08 eV [6]. In addition, different authors report measured barriers in range 0.3 -0.7 eV, with lower values generally extracted from C-V measurements and higher from I-V characteristics of diodes with a presumably defective Al/Ge interface -causing high contact resistances and poor ideality factor due to the interface oxide formation.…”

Section: A Boron-dominated Diffusion Modelmentioning

confidence: 99%

“…In addition, different authors report measured barriers in range 0.3 -0.7 eV, with lower values generally extracted from C-V measurements and higher from I-V characteristics of diodes with a presumably defective Al/Ge interface -causing high contact resistances and poor ideality factor due to the interface oxide formation. [6,29,30]. Therefore, the formation of a top-contact rectifying barrier of ɎB = 0.8 eV is unlikely.…”

Section: A Boron-dominated Diffusion Modelmentioning

confidence: 99%

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Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer

Marković

Knežević

Nanver

et al. 2021

2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)

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Deposition of a nanometer-thin layer-stack of pure gallium and boron (PureGaB) on arsenic (As)-doped epitaxial germanium (Ge) forms a shallow-junction photodiode, reported to have almost ideal I-V characteristics, low saturation current densities, and high responsivity down to 255 nm wavelengths. In this work, different physical mechanisms that could explain the high anode Gummel number in PureGaB-Ge-on-Si diode have been examined. A model for point-defect-mediated diffusion of B and Ga in Ge has been developed. Formation of a shallow pn junction has been modeled using 1D process simulations of B and/or Ga drive-in from the PureGaB layer. B diffusion resulted in junction depths less than a nanometer deep, while Ga formed a highly doped p + regions with peak concentrations >10 20 cm -3 and junction depths from 31 nm to 123 nm, depending on the applied sets of diffusion parameter. Both approaches have been used to fit the I-V characteristics of a fabricated PureGaB Ge-on-Si diode: B-only diffusion model with negative interface charge concentration of 1.9 10 13 cm -2 for suppression of electron injection and Ga diffusion model, selfsufficient for the explanation of low electron current densities. Both proposed models give possibilities to obtain a Gummel number of Ĭ Ĭ 2×10 14 s/cm 4 , matching the value extracted from I-V characteristics of a fabricated device.

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Section: Model and Parametersmentioning

confidence: 99%

Section: A Boron-dominated Diffusion Modelmentioning

confidence: 99%

Section: A Boron-dominated Diffusion Modelmentioning

confidence: 99%

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