2006
DOI: 10.2494/photopolymer.19.51
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Modeling of Cross-linking Reactions for Negative-type Thick film Resists

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Cited by 5 publications
(3 citation statements)
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“…Then, it was exposed to UV for 37 s for photolithography. Again, the exposed silicon wafer was placed on the hot plate and baked at 65 • C for 1 min and at 95 • C for 12 min [26]. The baked silicon wafer was cooled down and developed in a SU-8 developer until the catheter channel patterns were successfully obtained.…”
Section: Fabrication Of the Catheter Channel With Cavitiesmentioning
confidence: 99%
“…Then, it was exposed to UV for 37 s for photolithography. Again, the exposed silicon wafer was placed on the hot plate and baked at 65 • C for 1 min and at 95 • C for 12 min [26]. The baked silicon wafer was cooled down and developed in a SU-8 developer until the catheter channel patterns were successfully obtained.…”
Section: Fabrication Of the Catheter Channel With Cavitiesmentioning
confidence: 99%
“…It was known that thick resist molds fabricated using the negative resist SU-8 (Micro Chem) were useful because the pattern profiles were printed clearly and sharply and the sidewalls were perpendicular to the substrate surfaces. [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] However, the most suitable exposure wavelength of SU-8 is 365 nm, and SU-8 is insensitive to light with a wavelength of 450 nm, which is most appropriate for exposure using the LCD panel. To solve this problem, a novel multilayer resist process was contrived to utilize SU-8, as shown in Fig.…”
Section: Fabrication Of Practical Thick Resist Moldsmentioning
confidence: 99%
“…It is known that thick resist molds fabricated using the negative resist SU-8 10,11) (Micro Chem), which is sensitive to ultraviolet (UV) light, are usable for nickel electroplating, because the patterns have sharp and clear profiles, and the side walls are perpendicular to the substrate surfaces. [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] However, the most suitable exposure wavelength for SU-8 is 365 nm. On the other hand, since the transmittance of the LCD panel markedly decreases at wavelengths of less than 420 -430 nm, LCD matrix exposure should be performed using light with a wavelength of more than 440 nm.…”
Section: Introductionmentioning
confidence: 99%