Modeling of CIGS single–junction solar cell using multiple quantum well structure with enhanced efficiency

Azizifar, Sina; Imanieh, Mohsen; Hassanhosseini, Saeid; Bahadori-Jahromi, Farhad

doi:10.1007/s11082-020-02632-x

Cited by 4 publications

(3 citation statements)

References 23 publications

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“…(16) conforms to the experimental data reasonably well without using surface defects, 69 so all performance parameters of CIGS thin-film PVSCs can be predicted using only the bulk material-response parameters. Equation (16) helps model the defect density in graded-bandgap CIGS solar cells 69 and can be expected to do the same for quantum-well-based CIGS solar cells, 50 thereby assisting experimentalists.…”

Section: Resultsmentioning

confidence: 99%

“…But in either case, the process is dictated by the defect density chosen for the simulation, 42 and an inadequate choice can lead to a poor prediction of the device performance. With increased interest in bandgap-graded and quantum-well CIGS and CZTSSe thin-film PVSCs, 6 , 17 , 18 , 43 – 52 a knowledge of defect density and carrier lifetimes in relation to Eg (and therefore ξ) is a must.…”

Section: Introductionmentioning

confidence: 99%

“…Higher gallium content (i.e., higher ξ) leads to higher Nnormalf and lower τnormaln, and some nonlinear fits of Nnormalf to ξ have been proposed 25 , 31 . However, a systematic study of the performance parameters of a solar cell with a homogeneous CIGS layer versus ξ can establish Nnormalf and τnormaln for simulating graded-bandgap 46 – 49 and quantum-well 50 – 52 CIGS solar cells.…”

Section: Introductionmentioning

confidence: 99%

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Effects of defect density, minority carrier lifetime, doping density, and absorber-layer thickness in CIGS and CZTSSe thin-film solar cells

et al. 2023

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.Detailed optoelectronic simulations of thin-film photovoltaic solar cells (PVSCs) with a homogeneous photon-absorber layer made of with CIGS or CZTSSe were carried out to determine the effects of defect density, minority carrier lifetime, doping density, composition (i.e., bandgap energy), and absorber-layer thickness on solar-cell performance. The transfer-matrix method was used to calculate the electron-hole-pair (EHP) generation rate, and a one-dimensional drift-diffusion model was used to determine the EHP recombination rate, open-circuit voltage, short-circuit current density, power-conversion efficiency, and fill factor. Through a comparison of limited experimental data and simulation results, we formulated expressions for the defect density in terms of the composition parameter of either CIGS or CZTSSe. All performance parameters of the thin-films PVSCs were thereby shown to be obtainable from the bulk material-response parameters of the semiconductor, with the influence of surface defects being small enough to be ignored. Furthermore, unrealistic values of the defect density (equivalently, minority carrier lifetime) will deliver unreliable predictions of the solar-cell performance. The derived expressions should guide fellow researchers in simulating the graded-bandgap and quantum-well-based PVSCs.

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Section: Resultsmentioning

confidence: 99%