Modeling of bias-field-dependent dielectric properties in ferroelectric thin films

Abstract

The bias-field-dependent dielectricity of ferroelectric thin films is studied by use of a multilayer model capable of modeling saturated and unsaturated hysteresis behavior under arbitrary fields. The simulated minor hysteresis loops at different bias fields are used to calculate the variation of dielectric permittivity with the bias field. The -E loops show asymmetric shifting along the field axis when the film is assumed to possess a secondary dielectric layer with trapped charge. Simulated D-E and -E loops are compared with the experimental data on barium zirconate titanate and lead zirconate titanate thin films. In general, the model predictions show reasonably good agreement with experiment. Effects of charge density and the ac measurement field amplitude on the measured permittivity, as well as the dielectric tunability have also been examined.

Disappearance of Fatigue Heterogeneity Due to an Introduction of La0.8Sr0.2MnO3 Buffer Layers in Modified Lead Zirconate Titanate Ceramics

“…Fatigue heterogeneity is defined as a variation in ferroelectric properties with spatial region during fatigue cycling. Measurement of hysteresis loops driven by a symmetric field may show the asymmetry of the macroscopic hysteretic behavior in fatigued ferroelectric samples. It has been reported that all parameters including polarization, coercive field, dielectric constant, and piezoelectric coefficient are spatially highly heterogeneous after cycling.…”

Preisach Modeling of Electric-Field-Induced Strain of Ferroelectric Material Considering 90° Domain Switching

“…[16][17][18] The Preisach model is applied not only to the ferromagnetic system but also to ferroelectric D-E hysteresis, 19) compensation for the hysteresis of piezoelectric actuators, 20,21) piezoelectric nonlinearity, 22) and dielectric nonlinearity. 23) However, there are few reports on the Preisach modeling of strain butterfly hysteresis. Yang et al reported the Preisach modeling of the strain butterfly loop of ferroelectric films.…”