Modeling of Bias-Dependent Effective Velocity and Its Impact on Saturation Transconductance in AlGaN/GaN HEMTs

Pampori, Ahtisham; Ahsan, Sheikh Aamir; Dangi, Raghvendra; Goyal, Umakant; Tomar, Sanjay; Mishra, Meenal; Chauhan, Yogesh Singh

doi:10.1109/ted.2021.3078717

Cited by 13 publications

(8 citation statements)

References 28 publications

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“…In GaN HEMT device, to validate maximum peak performance, transconductance analysis helps to observe the ratio of change in output current to change in input voltage of an HEMT device 23 with the I-V curve the transconductance is calculated as shown in Eq. 1.…”

Section: Results and Analysismentioning

confidence: 99%

Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems

V²,

Chander³

et al. 2023

ECS J. Solid State Sci. Technol.

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In this research work, design of the extended field plate length (E-FPL) t-gate with Fe-doped AlGaN buffer structure on the graded aluminum gallium nitride (AlGaN)/ gallium nitride (GaN) high electron mobility transistor (HEMT) is proposed. The gate length of 60 nm with an ExFPL up to 50 nm towards the drain shows remarkable improvement in breakdown voltage. Meanwhile, the drain current and transconductance is further improved by the Fe-doped AlGaN Buffer design. In radio frequency (RF) small signal analysis this device exhibits a peak current-gain cutoff frequency fT of 148 GHz. This device has improved transconductance of 24% with high frequency. It is highly compatible with military applications such as RF upstream transmitters, ship and aircraft communication transmitters and high-frequency radars (HFRs).

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Section: Results and Analysismentioning

confidence: 99%

Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems

V²,

Chander³

et al. 2023

ECS J. Solid State Sci. Technol.

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“…3, represent the currents injected from the active layer into the drain, gate, and source lines. The transmission line equations associated with all electrodes are illustrated in (5)(6)(7)(8)(9)(10). These equation sets are identical in form for all lines [19].…”

Section: Numerical Analysismentioning

confidence: 99%

“…To obtain the power gain at each frequency, the equations ( 5)-( 10) are solved after temporal and spatial discretization. In this scheme, equations ( 6), (8), and ( 10 5), (7), and (9). And equations ( 5), (7), and ( 9) are also solved simultaneously to obtain the line currents at all segments.…”

Section: Figure 5 Fabricated Gan-hemt Device Inmentioning

confidence: 99%

“…Using experimental results in modeling requires data fitting and de-embedding the influence of pad parasitics and interconnect line effects. Measurement-based models are studied in [6][7][8][9][10]. A comparison between three optimization techniques: Genetic Algorithm, Grey Wolf Optimization, and Harris-Hawks Optimization was studied in [6].…”

Section: Introductionmentioning

confidence: 99%

“…Equivalent circuit models are the most common way of modeling millimeter-wave devices. In [9] and [10], efforts were made to account for the bias dependency of the extrinsic parameters. However, the accuracy of the models was not examined under non-linear operations.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects

Nouri

El-Ghazaly

2022

IEEE Access

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In this study, the transmission line concept and the electron transport theory are consolidated in a global modeling approach, the wave-electron-transport (WET) model, to account for the physical phenomena in millimeter-wave devices. No equivalent circuit model is required to represent the innate properties of the device. Hence, the model is reliable for both small-and large-signal analyses. The electrodes of a transistor act as coupled multi-conductor transmission lines at millimeter-wave bands. The WET model consists of a device solver to obtain solutions for carrier-transport equations of the intrinsic device, and an electromagnetic solver (EM solver) to provide solutions for the governing transmission lines equations. As it is crucial to transfer data between these two solvers, an interface scheme is also developed and included in the WET model. The extrinsic parameters of the device are extracted using a novel systematic technique merely based on the physical structure of the transistor. In this paper, the modeling procedure is applied to a fabricated GaN-HEMT device. Power sweep analysis has verified the accuracy of the proposed model under both linear and non-linear operations. Non-uniform voltage distribution caused by traveling waves over the electrodes is elaborately discussed to demonstrate the necessity of incorporating distributed effects.INDEX TERMS Electromagnetic-wave propagations, millimeter-wave transistor, non-linear operations, transmission line concept, wave-electron-transport model.

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An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

Wu,

Yao,

Liu

et al. 2024

Physica Status Solidi (a)

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In this work, an extended temperature current–voltage (I–V) model for AlGaN/GaN high electron mobility transistors (HEMTs) is proposed. Since there is no carrier freeze‐out effect in GaN HEMTs, the current density, switching characteristics, and heat dissipation performance are significantly improved with the decrease in temperature. The threshold voltage drift phenomenon can be accurately described at various temperatures by the trapping effect control potential model. Based on Matthiessen's law, the applicable temperature range of the mobility model is further extended. At cryogenic temperatures, the saturation current, saturation velocity, and sub‐threshold swing of the device tend to saturate as well as be temperature‐independent, which can be accurately modeled by using the equivalent temperature and applying the crucial temperature to quantify the turning point. Furthermore, the SHE modeling incorporates the temperature dependence of the material's thermal conductivity. The accuracy of the model is verified by experimental data at low (4.2–300 K) and high (298–773 K) temperatures. The proposed model overcomes the limitations of existing models applied at wide ambient temperatures.

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Modeling of Bias-Dependent Effective Velocity and Its Impact on Saturation Transconductance in AlGaN/GaN HEMTs

Cited by 13 publications

References 28 publications

Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems

Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems

Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects

An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

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