Modeling ISFET microsensor and ISFET-based microsystems: a review

Martinoia, Sergio; Massobrio, Giuseppe; Lorenzelli, Leandro

doi:10.1016/j.snb.2004.02.046

Cited by 37 publications

(30 citation statements)

References 48 publications

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“…the dependence of the source-drain current versus source-grid tension on the pH and temperature changes in weak and moderate inversion regime. Based on these results, the behavioral thermal drift of the pH-ISFET in the subthreshold region can be modeled by a combination of basic EKV model for the MOSFET part of the ISFET and a simplistic version of the site-binding model using Martinoia macro-model [25] presented in Fig. 2.…”

Section: Temporal Drift and Hysteresis Experimentsmentioning

confidence: 99%

Temperature influence on pH-ISFET sensor operating in weak and moderate inversion regime: Model and circuitry

Naimi¹,

Hajji²,

Humenyuk

et al. 2014

Sensors and Actuators B: Chemical

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a b s t r a c tUsually most pH-ISFET readout circuits, with temperature compensation, were designed using transistors operating in strong regime. However, a classes of circuits elaborated with respect to MOS weak inversion are also very suitable for low-voltage and low-power applications. In this work, we discuss the problem of temperature variation at the sensor and circuit level. An analysis was made of the sensor operating in weak and moderate inversion regime. It has been shown that a simplified version of the EKV model combined with site-binding model can describe the behavior of ISFET toward the temperature and pH change. The experimental results agree very well with the analytical model for devices in large intervals of pH and temperature. Finally, the usage of model development is considered with an original concept of a readout circuit. The result of the simulation shows that the output signal is linear with pH, the design technique permits improving temperature insensitivity. The proposed circuit can be integrated with an ISFET by standard CMOS technology.

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Section: Temporal Drift and Hysteresis Experimentsmentioning

confidence: 99%

Temperature influence on pH-ISFET sensor operating in weak and moderate inversion regime: Model and circuitry

Naimi¹,

Hajji²,

Humenyuk

et al. 2014

Sensors and Actuators B: Chemical

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“…This feature makes the MOS transistor applied to the many micro sensors as well as the circuit unit. The pH sensor (Cane´et al 1997;Pourciel-Gouzy et al 2004;Martinoia et al 2005), the charge sensor (Kim et al 2004), the pressure sensor (Hynes et al 1999) and the gas sensor (Dwivedi et al 2000) are the representative sensors.…”

Section: Sensing With Mos Transistormentioning

confidence: 99%

Fabrication and characterization of 3-Dimensional MOS transistor tip integrated micro cantilever

et al. 2006

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We fabricate and characterize a three-dimensional (3-D) MOS (metal-oxide-semiconductor) transistor tip integrated micro cantilever to measure the surface properties. The 3-D MOS transistor tip is fabricated on the front side end of the cantilever, and the cantilever itself works as a tip. These features make the device possible to investigate hard-detecting parts such as the deep trenches and the sidewalls of the structure. The MOS transistor tip has other advantages such as the high operation speed, the high sensitivity, and the reduction of the required equipments like the lock-inamplifier. The MOS transistor tip is fabricated threedimensionally, utilizing the lateral diffusion and the anisotropic wet etching with TMAH solution, since the etch rate of {211} plane is much higher than those of {100} or {111} planes. The gate area is formed by selfaligned technique, using crystallographic dependant wet etching. The well-known convex corner compensation pattern is used for the gate length control during the tip fabrication process. The characteristics of the fabricated device are measured with respect to the various electric signals and the results show the well-established detection properties.

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“…First ion sensitive field effect transistor (ISFET) was introduced by Bergveld in 1970(Bergveld 1970, 1972Martinoia et al 2005) which is similar to the metal oxide semiconductor field effect transistor (MOSFET) except that the channel region of the MOSFET is exposed to the electrolyte and therefore ions of the electrolyte or charged molecules at the surface of the channel act as the gate of the device (Stern et al 2008) In conventional MOSFET the gate electrode directly connect to the gate oxide (insulator), but in ISFET a reference electrode V Ref is inserted into the electrolyte. Ions in electrolyte or charged molecules influence the gate potential of the channel thus they can change the electrostatic characteristics of the device such as threshold voltage and drain current (Stern et al 2008).…”

Section: Introductionmentioning

confidence: 99%

“…The detection of molecules and ions in a biochemical environment plays an important role in chemical science (for pH sensing) and biotechnological application (for biomolecules detection). Semiconductor based Ion sensitive Field Effect Transistor have been developed to measure pH and also for the measurement of H + ions concentration in aqueous environment (Bergveld 1970;Martinoia et al 2005). The amount of surface charges at the interface of gate oxide/semiconductor depends on the concentration of specific ions presents in the ionic solution (Ashcroft et al 2004;Salaün et al 2011).…”

Section: Introductionmentioning

confidence: 99%

Novel junctionless electrolyte-insulator-semiconductor field-effect transistor (JL EISFET) and its application as pH/biosensor

et al. 2016

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of water). The Debye lengths were extracted depending on the concentration of phosphate buffered saline (PBS) solutions in the electrolyte region. In this paper, Junctionless based EISFET has been investigated for its applications as pH sensor and Biosensor. The change in the threshold voltage is considered as the sensing parameter to investigate the sensitivity of the device as pH sensor and biosensor.

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Modeling ISFET microsensor and ISFET-based microsystems: a review

Cited by 37 publications

References 48 publications

Temperature influence on pH-ISFET sensor operating in weak and moderate inversion regime: Model and circuitry

Temperature influence on pH-ISFET sensor operating in weak and moderate inversion regime: Model and circuitry

Fabrication and characterization of 3-Dimensional MOS transistor tip integrated micro cantilever

Novel junctionless electrolyte-insulator-semiconductor field-effect transistor (JL EISFET) and its application as pH/biosensor

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