2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC) 2017
DOI: 10.1109/nmdc.2017.8350513
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Modeling graphene FET frequency doubler with integrated quantum capacitance effects using quartic equation technique

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“…Various compact models and computation of quantum capacitances has been carried out to simulate circuits of graphene MOSFETs [27]- [29]. Gate all around MOSFET circuits of numerical models developed and been validated with ATLAS TCAD simulation for implementing the device as an inverter circuit and gain value is also estimated [30]. Graphene has a lot of futuristic applications and methods to determine the various parameters have been adopted for successful modelling of the material [31]- [33].…”
Section: Introduction-graphene Modeling and Applicationsmentioning
confidence: 99%
“…Various compact models and computation of quantum capacitances has been carried out to simulate circuits of graphene MOSFETs [27]- [29]. Gate all around MOSFET circuits of numerical models developed and been validated with ATLAS TCAD simulation for implementing the device as an inverter circuit and gain value is also estimated [30]. Graphene has a lot of futuristic applications and methods to determine the various parameters have been adopted for successful modelling of the material [31]- [33].…”
Section: Introduction-graphene Modeling and Applicationsmentioning
confidence: 99%