Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

Carrillo-Nuñez, Hamilton; Ziegler, Anne; Luisier, Mathieu; Schenk, Andreas

doi:10.1063/1.4922427

Cited by 31 publications

(15 citation statements)

References 26 publications

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“…planar TFETs [36]), or quantization is present in more than one dimension (i.e. nanowire TFETs [37]). Reference [37] proposes a model for direct tunneling in bulk, 2D and 1D carrier gasses.…”

Section: Models For Direct Btbt In Bulk Semiconductorsmentioning

confidence: 99%

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A review of selected topics in physics based modeling for tunnel field-effect transistors

Esseni

Pala

Palestri

et al. 2017

Semicond. Sci. Technol.

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The research field on tunnel-FETs (TFETs) has been rapidly developing in the last ten years, driven by the quest for a new electronic switch operating at a supply voltage well below 1 V and thus delivering substantial improvements in the energy efficiency of integrated circuits. This paper reviews several aspects related to physics based modeling in TFETs, and shows how the description of these transistors implies a remarkable innovation and poses new challenges compared to conventional MOSFETs. A hierarchy of numerical models exist for TFETs covering a wide range of predictive capabilities and computational complexities. We start by reviewing seminal contributions on direct and indirect band-to-band tunneling (BTBT) modeling in semiconductors, from which most TCAD models have been actually derived. Then we move to the features and limitations of TCAD models themselves and to the discussion of what we define non-self-consistent quantum models, where BTBT is computed with rigorous quantum-mechanical models starting from frozen potential profiles and closed-boundary Schrödinger equation problems. We will then address models that solve the open-boundary Schrödinger equation problem, based either on the non-equilibrium Green's function NEGF or on the quantum-transmitting-boundary formalism, and show how the computational burden of these models may vary in a wide range depending on the Hamiltonian employed in the calculations. A specific section is devoted to TFETs based on 2D crystals and van der Waals hetero-structures. The main goal of this paper is to provide the reader with an introduction to the most important physics based models for TFETs, and with a possible guidance to the wide and rapidly developing literature in this exciting research field.

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Section: Models For Direct Btbt In Bulk Semiconductorsmentioning

confidence: 99%

“…nanowire TFETs [37]). Reference [37] proposes a model for direct tunneling in bulk, 2D and 1D carrier gasses. It also presents a derivation of the non-local model for direct BTBT in bulk structures similar to our derivation in section 2.1.…”

Section: Models For Direct Btbt In Bulk Semiconductorsmentioning

confidence: 99%

A review of selected topics in physics based modeling for tunnel field-effect transistors

Esseni

Pala

Palestri

et al. 2017

Semicond. Sci. Technol.

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“…The Flietner model has already been proven to reproduce accurately the full-band and atomistic results of different bulk-diodes [13] and Si-InAs nanowires TFETs [10], as long as the correct potential and proper material parameters are provided. For the latter, the WKB approximation is employed.…”

Section: Simulation Methodologymentioning

confidence: 99%

Random Dopant-Induced Variability in Si-InAs Nanowire Tunnel FETs: A Quantum Transport Simulation Study

Carrillo-Nuñez

Lee

Berrada

et al. 2018

IEEE Electron Device Lett.

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In this letter, we report a quantum transport simulation study of the impact of random discrete dopants (RDDs) on Si-InAs nanowire p-type Tunnel FETs. The bandto-band tunneling is simulated using the non-equilibrium Green's function formalism in effective mass approximation, implementing a two-band model of the imaginary dispersion. We have found that RDDs induce strong variability not only in the OFF-state but also in the ON-state current of the TFETs. Contrary to the nearly normal distribution of the RDD-induced ON-current variations in conventional CMOS transistors, the TFET's ON-currents variations are described by a logarithmic distribution. The distributions of other figures of merit (FoM) such as threshold voltage and subthreshold swing are also reported. The variability in the FoM is analyzed by studying the correlation between the number and the position of the dopants.

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“…In such context, the consideration of quantum effects has been obtained via a one-dimensional solution of Schrodinger's equation on a section of the channel perpendicular to the gate contact [12,13]. However, it is not precise enough to predict the performance of nano-devices [14]. At the nanometre size, highly developed tools are necessary to describe the wave nature of electrons and quantum effects like energy quantization.…”

Section: Introductionmentioning

confidence: 99%

Electrical characteristics of metal–insulator–semiconductor and metal–insulator–semiconductor–insulator–metal capacitors under different high-k gate dielectrics investigated in the semi-classical and quantum mechanical models

2017

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In this paper the electrical characteristics of metal-insulator-semiconductor (MIS) and metalinsulator-semiconductor-insulator-metal (MISIM) capacitors with (100)-oriented p-type silicon as a substrate under different high-k gate dielectrics (SiO 2 , HfO 2 , La 2 O 3 and TiO 2) are investigated in the semi-classical and quantum mechanical models. We review the quantum correction in the inversion layer charge density for p-doped structures. The purpose of this paper is to point out the differences between the semi-classical and quantum mechanical charge descriptions at the insulator-semiconductor interface and the effect of the type of oxide and their position (gate oxide or buried oxide) in our structures. In particular, capacitance-voltage (C-V), relative position of the sub-band energies and their wavefunctions are studied to examine qualitatively and quantitatively the electron states and charging mechanisms in our devices. We find that parameters such as threshold voltage and device trans-conductance are enormously sensitive to the proper treatment of quantization effects.

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Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

Abstract: Articles you may be interested inInGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models A generation/recombination model assisted with two trap centers in wide band-gap semiconductors

Cited by 31 publications

References 26 publications

A review of selected topics in physics based modeling for tunnel field-effect transistors

A review of selected topics in physics based modeling for tunnel field-effect transistors

Random Dopant-Induced Variability in Si-InAs Nanowire Tunnel FETs: A Quantum Transport Simulation Study

Electrical characteristics of metal–insulator–semiconductor and metal–insulator–semiconductor–insulator–metal capacitors under different high-k gate dielectrics investigated in the semi-classical and quantum mechanical models

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