Abstract:A method is proposed for calculating the diffusion length damage coefficient for minority carriers ([Formula: see text]) in GaAs and InGaP solar cells under electron irradiation using the Shockley–Read–Hall (SRH) model for defect-assisted recombination. In the SRH model, the damage coefficient [Formula: see text] is proportional to the product [Formula: see text], where [Formula: see text] is the defect introduction rate under particle radiation and [Formula: see text] is the minority carrier capture cross sec… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.