2016
DOI: 10.1016/j.spmi.2016.06.008
|View full text |Cite
|
Sign up to set email alerts
|

Modeling comparison of graphene nanoribbon field effect transistors with single vacancy defect

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
14
0

Year Published

2017
2017
2021
2021

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 32 publications
(14 citation statements)
references
References 36 publications
0
14
0
Order By: Relevance
“…The optical effective mass of InAs/GaAs is reported in ref . The optical effective mass of single and bilayer graphene is reported using eqs and , , and we followed these equations for Al 2 O 3 /NiO. where k is the angular wave vector ( k = n ω), f is the radio frequency, c is the velocity of light, 2π is one cycle per angular momentum, j is the imaginary unit of TE–TM waves, m op * is the optical effective mass, and ℏ = 1.054 × 10 –34 J·s as reduced Planck’s constant. From the HR-TEM measurements, the area of the single spherical particle of Al 2 O 3 /NiO is n = 1.1304 × 10 –22 m 2 .…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The optical effective mass of InAs/GaAs is reported in ref . The optical effective mass of single and bilayer graphene is reported using eqs and , , and we followed these equations for Al 2 O 3 /NiO. where k is the angular wave vector ( k = n ω), f is the radio frequency, c is the velocity of light, 2π is one cycle per angular momentum, j is the imaginary unit of TE–TM waves, m op * is the optical effective mass, and ℏ = 1.054 × 10 –34 J·s as reduced Planck’s constant. From the HR-TEM measurements, the area of the single spherical particle of Al 2 O 3 /NiO is n = 1.1304 × 10 –22 m 2 .…”
Section: Resultsmentioning
confidence: 99%
“…The optical effective mass of InAs/GaAs is reported in ref 47. The optical effective mass of single and bilayer graphene is reported using eqs 7 and 8, 48,49 and we followed these equations for Al 2 O 3 /NiO.…”
Section: Exciton Phase Velocity (V P ) and (B) Groupmentioning
confidence: 99%
“…However, graphene as the two dimensional (2D) material has a zero bandgap resulting in undesirable limitations in semiconductor device applications. In electronic devices, semiconductors with a tunable bandgap are required [10][11][12][13][14][15][16][17]. To overcome this issue, several methods such as application of strain [18,19], adsorption of suitable elements [20,21], utilizing nanoribbons of graphene [9,17,[22][23][24], application of an external potential [25,26], layered stacking [27,28], Doping with other elements such as Boron and Nitrogen [8,9,29] and creation of defects such as antidotes [9,30,31] are among the methods which have been proposed in the literature.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, bilayer graphene can be used for this purpose, which is synthesized with difficulty [23,24]. One can manipulate electrical and magnetic properties of graphene by introducing different defect state in graphene [25,26]. Because all atoms are placed on the surface of graphene, density of electrons is high on it, so active is the graphene sheet that it can easily react with the gases in the surrounding atmosphere.…”
Section: Introductionmentioning
confidence: 99%