“…However, graphene as the two dimensional (2D) material has a zero bandgap resulting in undesirable limitations in semiconductor device applications. In electronic devices, semiconductors with a tunable bandgap are required [10][11][12][13][14][15][16][17]. To overcome this issue, several methods such as application of strain [18,19], adsorption of suitable elements [20,21], utilizing nanoribbons of graphene [9,17,[22][23][24], application of an external potential [25,26], layered stacking [27,28], Doping with other elements such as Boron and Nitrogen [8,9,29] and creation of defects such as antidotes [9,30,31] are among the methods which have been proposed in the literature.…”