Modeling charge collection and single event upsets in microelectronics

A new sembempirical model for proton induced SEU is presented. For estimating the energy deposited by the protons in the sensitive volumes of the devices the model uses the measured spectra of surface barrier detectors (SBD) with the same thicknessts of the sensitive volume and at the same proton energies;. Fitting the SBD spectra by exponential functions and the heavy ion induced cross sections by simple formulas results; in simple expressions for the proton cross sections. The model predictions are in good agreement with the experimental results.

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“…(7) might then be replaced by a step function: oion(E)=o, for E%C. EC can be chosen [7,14] as the value for which ai011 rises to 50% of om. …”

Section: The Semi-empirical Modelmentioning

confidence: 99%

A simple model for calculating proton induced SEU

Barak¹,

Levinson²,

Akkerman³

et al.

Proceedings of the Third European Conference on Radiation and Its Effects on Components and Systems

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“…While this prototype microdosimeter, with an array of micron size SVs, allowed acquisition of spectra related to gamma and neutrons interactions, quantification of microdosimetric spectra was impossible due to lack of well-defined sensitive volume geometry. Later, McNulty et al (1991) and Roth et al (1994) developed a silicon microdosimeter based on memory devices (993L422, 1 kByte). The system was intended for radiation monitoring in spacecraft and avionics.…”

Section: Solid-state Detectorsmentioning

confidence: 99%

ICRU Report 98, Stochastic Nature of Radiation Interactions: Microdosimetry

Braby,

Conte,

Dingfelder

et al. 2023

J�ICRU

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The Journal of the ICRU publishes reports on important and topical subjects within the field of radiation science and measurement. It is the successor to the series of reports published by or on behalf of the International Commission on Radiation Units and Measurements (ICRU) since 1927. The Commission continually reviews radiation science with the aim of identifying areas where the development of guidance and recommendations can make an important contribution.

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“…Below the cylinders, the probability that a generated charge reaches cylinder i is proportional to the solid angle i subtended by the base of that cylinder. This can be seen as a first-level approximation based on the random-walk nature of the diffusion process [58]. If a charge reaches the cylinder base, it will be collected with the same efficiency as all charges inside the cylinder.…”

Section: Charge-collection Analysismentioning

confidence: 99%

Proton- and Neutron-Induced Single-Event Upsets in FPGAs for the PANDA Experiment

Preston

Calén

Johansson

et al. 2020

IEEE Trans. Nucl. Sci.

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Single-event upsets (SEUs) affecting the configuration memory of a 28-nm field-programmable gate array (FPGA) have been studied through experiments and Monte Carlo modeling. This FPGA will be used in the front-end electronics of the electromagnetic calorimeter in PANDA (Antiproton Annihilation at Darmstadt), an upcoming hadron-physics experiment. Results from proton and neutron irradiations of the FPGA are presented and shown to be in agreement with previous experimental results. To estimate the mean time between SEUs during operation of PANDA, a Geant4-based Monte Carlo model of the phenomenon has been used. This model describes the energy deposition by particles in a silicon volume, the subsequent drift and diffusion of charges in the FPGA memory cell, and the eventual collection of charges in the sensitive regions of the cell. The values of the two free parameters of the model, the sensitive volume side d = 87 nm and the critical charge Q crit = 0.23 fC, were determined by fitting the model to the experimental data. The results of the model agree well with both the proton and neutron data and are also shown to correctly predict the cross sections for upsets induced by other particles. The modelpredicted energy dependence of the cross section for neutroninduced upsets has been used to estimate the rate of SEUs during initial operation of PANDA. At a luminosity of 1 • 10 31 cm −2 s −1 , the predicted mean time between upsets (MTBU) is between 120 and 170 h per FPGA, depending on the beam momentum.

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Modeling charge collection and single event upsets in microelectronics

Cited by 33 publications

References 8 publications

A simple model for calculating proton induced SEU

A simple model for calculating proton induced SEU

ICRU Report 98, Stochastic Nature of Radiation Interactions: Microdosimetry

Proton- and Neutron-Induced Single-Event Upsets in FPGAs for the PANDA Experiment

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