Modeling challenges for high-efficiency visible light-emitting diodes

Bertazzi, Francesco; Dominici, Stefano; Mandurrino, M.; Robidas, Dipika; Zhou, Xiangyu; Vallone, Marco; Calciati, Marco; Debernardi, Pierluigi; Verzellesi, Giovanni; Meneghini, Matteo; Bellotti, E.; Ghione, Giovanni; Goano, Michele

doi:10.1109/rtsi.2015.7325090

Cited by 3 publications

(2 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, modeling the current-voltage characteristics of LEDs in a wide range of currents is not trivial, since many mechanisms can contribute to leakage current conduction. Previous papers [10][11][12] preliminarily explored this topic, mainly based on the comparison between experimental currentvoltage (I-V) characteristics and simulations. However, the simulations were based on hypothetical defect parameters, rather than on actual data obtained from defect characterization, and the models could not be validated against actual defect concentrations/activation energies.…”

Section: Introductionmentioning

confidence: 99%

“…In the second step, we defined a model for the current-voltage characteristics of InGaN QW-based diodes, considering TAT as the main leakage mechanisms, using as a starting point the considerations proposed in early studies on the topic [10][11][12]. After model calibration, and verification of the sensitivity to the main parameters, the parameters of traps extracted in the first step were fed into the model, to reproduce the electrical characteristics of the devices.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Roccato

Piva

Santi

et al. 2021

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

Defects can significantly modify the electro-optical characteristics of InGaN light-emitting diodes (LEDs); however, modeling the impact of defects on the electrical characteristics of LEDs is not straightforward. In this paper, we present an extensive investigation and modeling of the impact of defects on the electrical characteristics of InGaN-based LEDs, as a function of the thickness of the quantum well (QW). First, we demonstrate that the density of defects in the active region of III-N LEDs scales with increasing thickness of the InGaN QW. Since device layers with high indium content tend to incorporate more defects, we ascribed this experimental evidence to the increased volume of defects-rich InGaN associated to thicker InGaN layers. Second, we demonstrate that the current-voltage characteristics of the devices are significantly influenced by the presence of defects, especially in the sub turn-on region. Specifically, we show that the electrical characteristics can be effectively modeled in a wide current range (from pA to mA), by considering the existence of trap-assisted tunneling processes. A good correspondence is obtained between the experimental and simulated electrical characteristics (I-V), by using-in the simulation-the actual defect concentrations/activation energies extracted from steady-state photocapacitance, instead of generic fitting parameters.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Roccato

Piva

Santi

et al. 2021

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

Numerical investigation of traps and optical response in III-V nitride quantum LED

Muthu

Nirmal

Ajayan³

et al. 2020

Opt Quant Electron

View full text Add to dashboard Cite

Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework

et al. 2016

View full text Add to dashboard Cite

We discuss some of the key issues to be addressed along the way to complement, and possibly to replace, the standard semiclassical Boltzmann picture with genuine quantum approaches for the simulation of carrier transport and recombination in GaN-based LEDs, with the goal of gradually removing the fitting parameters presently required by semiempirical «quantum corrections» and to better understand the processes responsible for the efficiency droop. As examples of augmented semiclassical models, we present a three-step description of trap-Assisted tunneling, especially relevant below the optical turn-on, and a carrier-density-dependent estimate of the phonon-Assisted capture rate from bulk states to quantum wells (QWs). Moving to genuine quantum models, we solve the semiconductor Bloch equations to calculate the gain/absorption spectra of AlGaN/GaN QWs, and we discuss our first simulations of spatially and energetically resolved currents across the active region of a single-QW LED based on the nonequilibrium Green's function approach

show abstract

Modeling challenges for high-efficiency visible light-emitting diodes

Cited by 3 publications

References 31 publications

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Numerical investigation of traps and optical response in III-V nitride quantum LED

Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework

Contact Info

Product

Resources

About