Modeling bundled concentric MWCNTs-based embedded power inductor

Mousa, Omar F.; Qahouq, Jaber A. Abu

doi:10.1109/intlec.2010.5525693

Cited by 2 publications

(5 citation statements)

References 13 publications

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“…Its physical structure mainly affects DC resistance, loss, parasitic capacitance, self‐inductance generated by the coil, and mutual inductance generated by the change of magnetic flux when the current flows through the coil. Figure 1 shows the equivalent circuit model commonly used in power inductor 8 …”

Section: Nonlinear Behavior Mechanism and Modeling Methodsmentioning

confidence: 99%

“…Figure 1 shows the equivalent circuit model commonly used in power inductor. 8 Among them, C 1 is the capacitance between the two ends of the inductor, which mainly represents the parasitic capacitance between the copper wires, and has a great influence on the resonant point. L 2 represents the selfinductance generated by the coils and the mutual inductance caused by the interaction between the coils leading to the change of magnetic flux.…”

Section: Static Modelmentioning

confidence: 99%

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Nonlinear behavior mechanism and modeling method of wound SMD inductor

Chen

2023

Int J Numerical Modelling

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In the actual use process, the characteristics of the wire‐wound power inductor will change. On the one hand, the DC bias will fluctuate because the working current of the wire‐wound power inductor is not constant; on the other hand, there is a variable magnetic field, which, according to the principle of electromagnetic, affects structural size, core permeability, and flux density, both of which affect the amount of inductance. As a result, this research examines the wire‐wound SMD inductor's nonlinear behavior and modeling approach. Under the condition of zero bias at normal temperature, the static model is determined by simulating Y parameters and comparing its main performance parameters. The influence factors of temperature and DC bias are studied. The nonlinear model circuit is written in Verilog‐A format, and the inductor‐current curve is fitted by polynomial. The dynamic model is verified by ADS and compared with the test data. SWPA series power inductor measurement data from Sunlord is used to verify the validation of the model proposed in this paper. The Y parameter and performance index under zero DC bias at room temperature, inductance characteristics under different currents and inductance characteristics under different temperatures were compared respectively. From the comparison results, it can be concluded that, The fitting accuracy of the model is good in the frequency range of 100 KHz ~ 100 MHz, DC bias range of 0 ~ 0.28 A, and different temperatures (−40, 25, 125°C).

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Section: Nonlinear Behavior Mechanism and Modeling Methodsmentioning

confidence: 99%

Section: Static Modelmentioning

confidence: 99%

Nonlinear behavior mechanism and modeling method of wound SMD inductor

Chen

2023

Int J Numerical Modelling

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“…The diameters of CNTs are in the order of 2nm. In this application, it would be preferable for CNTs to have the smallest diameters possible to increase the probability of CNTs being semiconductor during the synthesis and to align all the BSWCNTs in parallel to the desired direction of conduction [11 ]- [22].…”

Section: A Power Diode Structure and Propertiesmentioning

confidence: 99%

“…By carefully controlling the dopants, it is possible to increase the life time of the carriers and, hence, reduce the recombination rates and increase the efficiency. Unlike any other type of semiconductor in which doping is merely substitution of atoms of two types (donor or acceptor), BSWCNTs can be doped in three distinctive ways: intercalation, endohedral, and adductive [19]- [22]. The spectrum of the doping energy will differ for each manner of doping to increase the possibility of finding an optimum doping that will result in high efficiency.…”

Section: A Power Diode Structure and Propertiesmentioning

confidence: 99%

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Carbon nanotube-based power diode

Mousa

Qahouq

2011

2011 IEEE 33rd International Telecommunications Energy Conference (INTELEC)

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Power diodes are frequently used in power converters and inverters as freewheeling and snubber components. In many applications, power diodes are required to meet demands such as short reverse recovery time, soft recovery, high breakdown voltage and a low forward voltage drop at the rated forward current with small size. Bundled Single-walled Carbon Nanotube (BSWCNT) p-type semiconductor is a strong candidate material for power diodes because of the selective electron transport that can be used in hot carrier, ballistic transport, high current density, mechanical stiffness, thermal, and chemical stability. In addition, carbon nanotube-based power diode provides high breakdown voltage, high electrical conductivity in the forward mode, and high current output capability. This paper presents modeling, design, and simulation of the Bundled Single-Walled Carbon (BSWCNT) nanotechnology-based power diode.

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Modeling bundled concentric MWCNTs-based embedded power inductor

Cited by 2 publications

References 13 publications

Nonlinear behavior mechanism and modeling method of wound SMD inductor

Nonlinear behavior mechanism and modeling method of wound SMD inductor

Carbon nanotube-based power diode

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