Modeling arsenic activation and diffusion during furnace and rapid thermal annealing

Vandenbossche, Eric; Jaouen, H.; Baccus, B.

doi:10.1109/iedm.1995.497187

Cited by 2 publications

(2 citation statements)

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“…decreased. 31) On the other hand, the diffusion of the Si as a species into the GaN was rarely observed. Therefore, we assume that the activation ratio was very high, although the activation temperature of GaN is higher than those of Si and GaAs.…”

Section: Si Ion Implantation Into Ganmentioning

confidence: 99%

“…The Si atoms were not completely diffused into GaN by annealing at 1260 C for 30 s. In the case of Si and GaAs layers, since the species implanted easily diffuses at high temperatures and with time, the nominal carrier density of the implanted layer is generally decreased. 31) On the other hand, the diffusion of the Si as a species into the GaN was rarely observed. Therefore, we assume that the activation ratio was very high, although the activation temperature of GaN is higher than those of Si and GaAs.…”

Section: Si Ion Implantation Into Ganmentioning

confidence: 99%

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Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors

Niiyama

Ootomo

et al. 2008

jjap

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We have studied the activation of Si ion implanted un-and Mg-doped gallium nitride (GaN) for the fabrication of reduced surface field (RESURF) metal-oxide-semiconductor field-effect transistors (MOSFETs). By annealing at 1260 C for 30 s by using rapid thermal annealing (RTA), the activation ratios of un-and Mg-doped GaN with Si doses of 3 Â 10 15 cm À2 were $100 and 73%, respectively. These values are sufficient for application some semiconductor devices. Hardly any diffusion of the Si atoms implanted in GaN was observed by secondary ion mass spectrometry (SIMS). The activation ratio between unand Mg-doped GaN was markedly different at low doses. The cause of the difference appears to be Mg compensation in GaN. In addition, we fabricated GaN MOSFETs with ion implanted RESURF zones. We also monitored the field-effect transitor (FET) operation and high breakdown voltage of the GaN MOSFETs. The threshold voltage was +2 V. An enhancement mode operation and a breakdown voltage higher 1500 V at a RESURF length of 20 mm were achieved.

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Section: Si Ion Implantation Into Ganmentioning

confidence: 99%

Section: Si Ion Implantation Into Ganmentioning

confidence: 99%