Modeling and Simulation of Tin Sulfide (SnS)-Based Solar Cell Using ZnO as Transparent Conductive Oxide (TCO) and NiO as Hole Transport Layer (HTL)

Abstract

This paper describes the simulation by Solar Cell Capacitance Simulator-1D (SCAPS-1D) software of ZnO/CdS/SnS/NiO/Au solar cells, in which zinc oxide (ZnO) is used as transparent conductive oxide (TCO) and nickel oxide (NiO) is used as a hole transport layer (HTL). The effects of absorber layer (SnS) thickness, carrier concentration, SnS defect density, NiO HTL, ZnO TCO, electron affinity and work function on cell performance have been evaluated. The effect of interface defect density of SnS/CdS on the performance of the heterojunction solar cell is also analysed. As the results indicate, a maximum power conversion efficiency of 26.92% was obtained.

Performance Enhancement of PbS‐TBAI Quantum Dot Solar Cell with MoTe2 as Hole Transport Layer

“…Marc Burgelman, from the Department of Electronics and Information Systems at the University of Ghent in Belgium, created the 1D solar cell capacitance simulation software (SCAPS-1D). [17,18] For solar cell device modeling in recent years, this software is one of the most popular options and also this tool solved the general mathematical equations that are listed below, including the Poisson's equation and the continuity equation. [19] ∂ ∂x…”

“…Marc Burgelman, from the Department of Electronics and Information Systems at the University of Ghent in Belgium, created the 1D solar cell capacitance simulation software (SCAPS‐1D). [ 17,18 ]…”

Studies of Performance of Cs2TiI6−XBrX (Where x = 0 to 6)-Based Mixed Halide Perovskite Solar Cell with CdS Electron Transport Layer

“…In our proposed FTO/CdS/Cs 2 TiI 6−X Br X /CuSCN/Ag-based planar solar cell device model, the band gap of ETL (electron transport layer) materials, CdS and HTL material CuSCN are taken to be 2.4 eV, 3.26 eV and 3.4 eV, respectively, and the absorbing layer is tuneable under 1.0–1.78 eV [ 10 , 11 , 12 , 13 , 14 , 15 ]. The working temperature for the simulation is maintained at 27 °C with −0.8 V to 0.8 V bias voltage in the SCAPS-1D simulator.…”

Impact on generation and recombination rate in Cu2ZnSnS4 (CZTS) solar cell for Ag2S and In2Se3 buffer layers with CuSbS2 back surface field layer

“…The generation, recombination, and transportation processes result in an evolution of the densities of electrons and holes, which is explained by the transport and continuity equation. 31,32 state conditions, it is possible to both anticipate and evaluate the optoelectronic properties of PV cell structures. 29,30 with Ni as the back surface.…”

“…SCAPS‐1D is utilized to construct a numerical interpretation for the proposed CZTS SCs based on Poisson's equations. The generation, recombination, and transportation processes result in an evolution of the densities of electrons and holes, which is explained by the transport and continuity equation 31,32 …”