Modeling and Simulation of Capacitance–Voltage Characteristics of a Nitride GaAs Schottky Diode

Ziane, Abderrezzaq; Amrani, M.; Benamara, Z.; Rabehi, Abdelaziz

doi:10.1007/s11664-018-6408-1

Cited by 6 publications

(1 citation statement)

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“…In fact, the yields of the charges at the D it to the measurements at low-frequencies result in obtaining excessive C and G/ω values at these frequency ranges [32]. The peak, NC, and inductive behavior (IB) are the other anomalies experimentally observed, and they are reported in the literature several times for different materials [33][34][35][36][37][38][39][40][41][42][43]. Although the observation of NC behavior for different materials has different explanations related to their internal properties, there should be general principles for the explanation of NC for all types of structures.…”

Section: Introductionmentioning

confidence: 96%

Investigation of photon-induced effects on some diode parameters and negative capacitance of the Schottky structure with Zn-doped organic polymer (PVA) interface

Tanrıkulu

2022

Phys. Scr.

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Variation in the electrical parameters depending on illumination and the formation of negative capacitance (NC), and inductive behavior (IB) of Schottky structures interlaid with Zn:PVA, were executed by current/impedance-voltage (I/Z-V) measurements in the dark and under 200 mW/cm2 illuminance. To designate the voltage or calculation method effects on the ideality factor (n), barrier height (BH-B), and series resistance (Rs), these parameters were extracted from different methods. These parameters extracted through the Thermionic-emission (TE) theory, Ohm's law, Norde and Cheung functions were compared with each other. The reverse bias ln(IR) – VR0.5 plots were also drawn to designate the validity of Poole-Frenkel and Schottky emissions. In Z-V measurements, NC and related IB phenomena were observed at 500 kHz-fixed frequency in the dark and under illuminance. The interface states (Dit) variation depending on energy and voltage was obtained using current and capacitance measurements and related equations. The calculations of the diffusion-potential (VD), acceptor-atoms (NA), Fermi-energy (EF), and B(C-V) values were performed by fitting the observed linear in the reverse bias C-2-V plot. A detailed analysis of NC and IB was performed via the drawn C/G/-I plots for positive voltages. All experimental results show that the used calculation method, illumination, and voltage are highly effective on the electrical parameters.

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