Modeling and Simulation of AlGaN/GaN MOS-HEMT for Biosensor Applications

Pal, Praveen; Pratap, Yogesh; Gupta, Mridula; Kabra, Sneha

doi:10.1109/jsen.2018.2878243

Cited by 57 publications

(42 citation statements)

References 34 publications

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“…where the constants H and A 1 are defined as: V gon and V god are dependent on applied gate voltage and cut-off voltage of the device [38]. The charge carrier concentration at drain end can be calculated by replacing V gdo with V go − V ef .…”

Section: Drain Current Modelmentioning

confidence: 99%

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Analytical Modeling and Simulation of AlGaN/GaN MOS-HEMT for High Sensitive pH Sensor

2021

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This paper presents an analytical model of AlGaN/GaN MOS-HEMT based pH sensor for the first time to determine pH of different electrolyte solutions. Gouy-chapman stern model has been used to calculate the surface charge density. The results obtained using analytical model have been verified and show good agreement with the simulated results. Cavity length, thickness of AlGaN barrier layer and Al composition have been optimized to improve the sensitivity of the device. It has been observed that the drain current and threshold voltage decreases with increase in pH of the electrolytic solutions. Proposed AlGaN/GaN MOS-HEMT sensor demonstrate a quick response to the pH changes. The maximum drain-on-sensitivity of the device is 132mA/mm-pH. Surface potential and threshold voltage sensitivity of 0.95mV/pH and 950mV/pH respectively have been obtained which is much higher than the Nernstian limit(59.2mV/pH).

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Section: Drain Current Modelmentioning

confidence: 99%

“…The charge carrier concentration at drain end can be calculated by replacing V gdo with V go − V ef . The effective drain voltage (V e f ) of the MOSHEMT device is dependent on effective mobility and saturation velocity of electrons [38].…”

Section: Drain Current Modelmentioning

confidence: 99%

Analytical Modeling and Simulation of AlGaN/GaN MOS-HEMT for High Sensitive pH Sensor

2021

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“…Systematic analysis of the device and its sensing behavior is important to develop sensors with high precision. Physics based analytical model are used in designing high resolution chemical and bio-HEMTs [10][11][12][13]. However, till date there are no models developed that accounts for the gas sensing behavior of AlGaN/GaN HEMTs.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Simulation of Ultrahigh Sensitive AlGaN/AlN/GaN HEMT-Based Hydrogen Gas Detector With Low Detection Limit

2021

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Presented through this work is a steady state analytical model of the GaN HEMT based gas detector. GaN with high chemical and thermal stability provides promises for detectors in hazardous environments. However, HEMT sensor resolution must be improved to develop high precision gas sensors for automotive and space applications. The proposed model aids in systematical study of the sensor performance and prediction of sensitivities. The linear relation of threshold voltage shift at thermal equilibrium is used in predicting the sensor response. Numerical model for the reaction rates and the electrical dipole at the adsorption sites at the surface and metal/semiconductor interface have been developed and the sensor performance is analyzed for various gas concentrations. The validation of the model has been achieved through surface and interfacial charge adsorption-based gate electrode work function, Schottky barrier, 2DEG and threshold voltage deduction using MATLAB and SILVACO ATLAS TCAD. Further the applicability of gd (channel conductance) as gas sensing metric is also presented. With high ID and gd percentile sensitivities of 118.5% and 92 % for 10 ppm hydrogen concentration. The sensor shows capability for detection in sub-ppm levels by exhibiting a response of 0.043% for 0.01ppm (10 ppb) hydrogen concentration. The detection limit of the sensor (1% sensitivity) presented here is 169 ppb and the device current increases by 34.2 μA for 1ppb hydrogen concentration.

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“…Additionally, accurate industry standard compact models such as the Advanced Spice Model (ASM) -HEMT [24][25], MIT Virtual Source GaNFET (MVSG) [26], and the Charge -Based EPFL HEMT [27][28] Models have been used widely for bridging the gap between proposed devices and their industry driven applications. Architectures such as the MOSHEMTs [29][30][31], MISHEMTs [32][33][34], along with novel gate architectures such as the circular gate for LED applications [35], and π -Gate HEMTs for reducing hot electron generation [36] have also been studied. The π -Gate architecture put forward by Alvaro et al [36], as reported exhibits better thermal operation due to the modification of electric field profile in form of two steps that are consistent with the legs of the 'π' structure and helps in bringing down the peak channel temperature of the device.…”

Section: Introductionmentioning

confidence: 99%

Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

Sehra

Kumari

Gupta

et al. 2020

Silicon

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This paper presents a comprehensive TCAD based assessment to evaluate the intrinsic gain and minimum noise figure metrics of the T -Gate, and the π -Gate AlGaN/AlN/GaN HEMTs along with their recessed architectures. The work presented in this paper, to the best of author's knowledge, is first in its attempt to systematically bring out both the effect of minimum noise figure metrics and intrinsic gain at the device level for the π -Gate architecture and their recessed counterparts whilst evaluating its stability for high frequency operations. Comparison demonstrates an enhancement in intrinsic gain by 64.5% in case of asymmetric π -Gate and 77% for asymmetric recessed π -Gate in comparison to their T -Gate counterparts. Further, the said architectures possess a wider range of flat gain operation with suppressed values of minimum noise figure metrics. These modifications result in a modest trade off in the minimum noise figures when best case is considered and compared with their T -Gate counterparts. Additionally, it is also demonstrated that such device architectures demonstrate much stable high frequency operation in comparison to their primer. The results so presented establish the superiority of the π -Gate AlGaN/ AlN/GaN HEMTs for low noise and high gain applications.

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Modeling and Simulation of AlGaN/GaN MOS-HEMT for Biosensor Applications

Cited by 57 publications

References 34 publications

Analytical Modeling and Simulation of AlGaN/GaN MOS-HEMT for High Sensitive pH Sensor

Analytical Modeling and Simulation of AlGaN/GaN MOS-HEMT for High Sensitive pH Sensor

Modeling and Simulation of Ultrahigh Sensitive AlGaN/AlN/GaN HEMT-Based Hydrogen Gas Detector With Low Detection Limit

Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

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