Modeling and optimization of inductors with patterned ground shields for a high performance fully integrated switched tuning VCO

Rotella, F.M.; Zachan, J.

doi:10.1109/cicc.2002.1012801

Cited by 12 publications

(5 citation statements)

References 4 publications

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“…There have been some incremental improvements in the design of monolithic spiral inductors using more exotic techniques as well, including the use of patterned ground shields to reduce eddy current losses [46] "hairpin" designs [47], micromachining techniques [48], and "solenoid"-based designs [49].…”

Section: A Monolithic Inductorsmentioning

confidence: 99%

Silicon technology tradeoffs for radio-frequency/mixed-signal "systems-on-a-chip"

Larson¹

2003

IEEE Trans. Electron Devices

100

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Silicon technology has progressed over the last several years from a digitally oriented technology to one well suited for microwave and RF applications at a high level of integration. Technology scaling, both at the transistor and back-end metallization level, has driven this progress. CMOS technology is ideally suited for low-noise amplification and receiver applications, but the fundamental breakdown voltage is lower than that of equivalent Si/SiGe HBTs. High-quality passive devices are equally important, and improvements in metallization technology are resulting in higher quality inductors. This paper summarizes the silicon technology issues associated with RF "system-on-a-chip" applications.

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Section: A Monolithic Inductorsmentioning

confidence: 99%

Silicon technology tradeoffs for radio-frequency/mixed-signal "systems-on-a-chip"

Larson¹

2003

IEEE Trans. Electron Devices

100

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“…In order to anticipate the design problems and propose the performance, it is essential to predict the behavior of the inductor as a function of their geometry and manufacturing parameters. Numerous research works has been published on modeling inductors (Lovelace et al 1994;Post 2000;Rotella and Zachan 2002;Zencir et al 2002;Tong and Tsui 2005) and on techniques to improve the quality factor (Q-factor) (Yeung et al;Lin et al 2005a, b;Itoi et al 2004). However, most of the modeling and the theoretical analysis in print aimed at spiral-type MEMS inductors.…”

Section: Introductionmentioning

confidence: 99%

Modeling, optimization and performance of high-Q MEMS solenoid inductors

et al. 2007

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Modeling, optimization and performance of onchip solenoid inductors is presented. MATLAB is used to get the p-equivalent circuit model parameters. The effects of the geometrical parameters on the inductance and quality factor (Q-factor) are different. Normally, the performance of the inductors can be improved by increasing the coil turns in a way and increasing the length of the conductor, but both of them will occupy more chip area, which is not good for the minimization of the on-chip system. It is desirable to improve the performance of inductor by increasing the height of the via. Of the three types of fabricated inductors covering the same area, the inductors with the height of via 15, 30 and 45 lm have high performance. The self-resonant frequency is up to 10 GHz. The inductances and Q-factors at peak-Q frequency (about 5.8 GHz) are 1.16, 1.35, 1.78 nH and 21.9, 27, 38, respectively.

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“…Many efforts are made to solve the problem, and the works about these are impressive. To improve the -factor, suspension and solenoid structure [6][7][8][9], thick insulating layer [10], grounded shield [11,12], and high resistivity substrate structure [2,13] are applied to reduce the substrate loss; coils made by high conductivity metal [14,15] and low k interlayer dielectric [16] are applied to reduce the resistive loss; multilayer inductors are applied to reduce the area occupation [17,18]. However, all the previosely mentioned works cannot both satisfy the demands of small size and high factor at the same time.…”

Section: Introductionmentioning

confidence: 99%

Application of Ferrite Nanomaterial in RF On‐Chip Inductors

Cai

Zhan

Yang

et al. 2013

Journal of Nanomaterials

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Several kinds of ferrite-integrated on-chip inductors are presented. Ferrite nanomaterial applied in RF on-chip inductors is prepared and analyzed to show the properties of high permeability, high ferromagnetic resonance frequency, high resistivity, and low loss, which has the potential that will improve the performance of RF on-chip inductors. Simulations of different coil and ferrite nanomaterial parameters, inductor structures, and surrounding structures are also conducted to achieve the trend of gains of inductance and quality factor of on-chip inductors. By integrating the prepared ferrite magnetic nanomaterial to the on-chip inductors with different structures, the measurement performances show an obvious improvement even in GHz frequency range. In addition, the studies of CMOS compatible process to integrate the nanomaterial promote the widespread application of magnetic nanomaterial in RF on-chip inductors.

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Modeling and optimization of inductors with patterned ground shields for a high performance fully integrated switched tuning VCO

Cited by 12 publications

References 4 publications

Silicon technology tradeoffs for radio-frequency/mixed-signal "systems-on-a-chip"

Silicon technology tradeoffs for radio-frequency/mixed-signal "systems-on-a-chip"

Modeling, optimization and performance of high-Q MEMS solenoid inductors

Application of Ferrite Nanomaterial in RF On‐Chip Inductors

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