“…The energy consumption of the DS process is an important component of the total costs, which limits the cost of polysilicon. Zheng and Liu et al [9,10] found that the installation of a partition block between the hot and cold zones can effectively reduce the total power of the heater, decrease the heat losses from lateral parts of the crucible, and improve the efficiency of crystallization. Lan and Yoon et al [11,12] confirmed that different cooling paths and coolant flow rates at the bottom of crucible could change the rate of crystal growth and shorten the time cost of DS process.…”