Modeling and Evaluation of Carbon-Nanotube-Based Integrated Power Inductor for On-Chip Switching Power Converters

Carbon nanotube-based power diode

“…The electric currents collected by the BSWCNTs would, in tum, further collected by electrode contact (electrons should travel to collecting surface before they undergo charge recombination, or in other words, the diffusion length is greater than the BSWCNTs thickness). In addition, the BSWCNT-based power diode has multiplying effect which is due to the cylindrical pore-structure of the BSWCNTs that causes the electrons to be neatly squeezed through the CNTs tube one by one [12]- [20]. …”

Spiral shape CNT on silicon substrate growth control method for on-chip electronic devices applications

“…Introduction: The unique electronic and mechanical properties of carbon nanotubes (CNTs) continue to attract the attention of researchers to utilise them in a variety of candidate applications [1][2][3][4]. These applications include electronic devices or components.…”

“…The eventual particle size and the resultant nanotube diameter seem to correlate to the film thickness. Thinner films in general lead to smaller particles and CNT diameters [1][2][3][4][5][6][7][8].…”

“…In this method, wafer bonding steps are avoided. The focus of this Letter is to realise the spiral shape on Si substrates that is need to realise power inductors such as the one in [4], even though it could be utilised for other electronic devices that require other similar desired shapes.…”

“…One of the applications that desire this example shape is an integrated inductor, e.g. [4]. Then the photoresist (PR) is stripped off and the wafer is cleaned by acetone, methanol, and isopropanol and deionised water.…”