Modeling and characterizing power semiconductors at low temperatures

Vogler, T.; Schlögl, A.; Schröder, Dierk

doi:10.1109/ispsd.1994.583732

Cited by 20 publications

(6 citation statements)

References 7 publications

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“…Vogler et al simulated the static and dynamic behaviors of different power devices (power diode, Insulated Gate Bipolar Transistor (IGBT), and Gate Turn-Off thyristors (GTO)) [13] at cryogenic temperature. They found that for each device, in addition to the static conduction losses, the switching losses are also much lower These improvements are due to a moderate decrease of inherent device capacitance and dropping minority carrier lifetimes at lower temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Improving Performance of Cryogenic Power Electronics

Haldar

Efstathiadis

et al. 2005

IEEE Trans. Appl. Supercond.

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Cryogenic Power Electronics (CPE) provides promising benefits for power conditioning system compared to their room-temperature counterparts in terms of reduced size and weight (increased power density), improved efficiency, improved switching speed, and improved reliability. Active devices such as semiconductor switches can exhibit performance improvements such as reduced conduction losses, higher switching speed, reduced diode reverse recovery, greater device gain, higher over-current capability, and increased power levels. Passive devices (inductors, capacitors, interconnects) will also improve by the lowered resistance of their constituent metal conductors or the use of superconductors. This paper aims to review the present status of CPE and to provide an outlook on emerging device technologies that are gaining in interest. Advanced power electronic packaging/interconnect methods that adapt well to cryogenics and help further improve system performance is discussed. Given improved and known device and interconnect properties, the system designer can develop the best circuit topologies for maximum CPE system performance.

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Section: Introductionmentioning

confidence: 99%

“…Simulated switching losses of a PT-IGBT as a function of temperature (courtesy of Vogler et al[13]). (Fig.…”

mentioning

confidence: 99%

Improving Performance of Cryogenic Power Electronics

Haldar

Efstathiadis

et al. 2005

IEEE Trans. Appl. Supercond.

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“…Bei bipolaren Bauelementen nehmen dagegen die Schaltverluste aufgrund der abnehmenden Lebensdauer mit abnehmender Temperatur ab, allerdings steigen die Durchlaßverluste[55,685,686,768]. Stellglied und Netz wurden realitätsnahe simuliert, als Lastströme wurden auf Magnetband aufgezeichnete Ströme eines Drehstromlichtbogenofens eingespeist.…”

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Elektrische Antriebe 4

Schröder¹

1998

Springer-Lehrbuch

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“…Thus an open liquide nitrogene system was used (see also [5,61) requiring special measuring-and mounting technique of the devices which shall be described as follows.…”

Section: Methodsmentioning

confidence: 99%

“…Considering now the switching behaviour of a power disde, for instance used as a free wheeling diode of a chopper circuit, it can be observed that the switching losses at the diode turn-off are decreasing with reducing temperature [5]. The loss reduction at 77 K may be throughout in the order of 80% of the room temperature value.…”

Section: Power Diodementioning

confidence: 99%

Comparison of zero-voltage-switching converters at low temperatures

Marx

Schlögl²,

Eder³

et al.

PESC Record. 27th Annual IEEE Power Electronics Specialists Conference

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In the last years the investigation of switching power devices' behaviour at liquid nitrogen temperature has gained more and more significance with respect to developing superconducting applications.Most of the previous work in literature is focussing very much on the behaviour of separated turn-on or turn-off transitions of switching elements, and only few publications are considering the continuous switching operation in a power converter at low temperatures.In this paper different soft-switching converters and their hard-switched counterpart are compared regarding their performance at room temperature and at 77 K. Current and voltage waveforms at the switching elements will be presented for single switching transitions and the overall converter efficiency during steady-state operation.It is shown that soft-switching at low temperatures is resulting no longer in a clear increase of power density and converter efficiency, but may even result in a reduction of converter efficiency.

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Modeling and characterizing power semiconductors at low temperatures

Cited by 20 publications

References 7 publications

Improving Performance of Cryogenic Power Electronics

Improving Performance of Cryogenic Power Electronics

Elektrische Antriebe 4

Comparison of zero-voltage-switching converters at low temperatures

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