2021
DOI: 10.1016/j.sse.2021.108139
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Modeling and characterization of photovoltaic and photoconductive effects in insulated-gate field effect transistors under optical excitation

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Cited by 2 publications
(3 citation statements)
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“…When exposed to light, the device shows an increased current due to the photoconduction effect. Besides, a left shift is presented under laser irradiation, suggesting that also a photovoltaic effect occurs [ 59 , 60 ].
Fig.
…”
Section: Resultsmentioning
confidence: 99%
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“…When exposed to light, the device shows an increased current due to the photoconduction effect. Besides, a left shift is presented under laser irradiation, suggesting that also a photovoltaic effect occurs [ 59 , 60 ].
Fig.
…”
Section: Resultsmentioning
confidence: 99%
“…light, the device shows an increased current due to the photoconduction effect. Besides, a left shift is presented under laser irradiation, suggesting that also a photovoltaic effect occurs [59,60]. As a first approach to the study of the optoelectronic properties of the device, a series of white laser pulses (60 s long) have been sent on the sample.…”
Section: Resultsmentioning
confidence: 99%
“…With the illumination, the gate voltage increases, thus, causes to enhance the effective surface potential. As a result, finally, the effective threshold voltage decreases with the incident light [33]. The bandgap energy of Si Sn was theoretically calculated using the Eqn.…”
Section: Device Design and Theoretical Modelsmentioning
confidence: 99%