“…When exposed to light, the device shows an increased current due to the photoconduction effect. Besides, a left shift is presented under laser irradiation, suggesting that also a photovoltaic effect occurs [ 59 , 60 ]. Fig.…”
Section: Resultsmentioning
confidence: 99%
“…light, the device shows an increased current due to the photoconduction effect. Besides, a left shift is presented under laser irradiation, suggesting that also a photovoltaic effect occurs [59,60]. As a first approach to the study of the optoelectronic properties of the device, a series of white laser pulses (60 s long) have been sent on the sample.…”
Mechanically exfoliated multilayer WS2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temperature reveals devices with n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS2 phototransistors can be operated in self-powered mode, yielding both a current and a voltage when exposed to light. The spectral photoresponse in the visible and the NIR ranges shows a high responsivity (4.5 μA/W) around 1250 nm, making the devices promising for telecommunication applications.
“…When exposed to light, the device shows an increased current due to the photoconduction effect. Besides, a left shift is presented under laser irradiation, suggesting that also a photovoltaic effect occurs [ 59 , 60 ]. Fig.…”
Section: Resultsmentioning
confidence: 99%
“…light, the device shows an increased current due to the photoconduction effect. Besides, a left shift is presented under laser irradiation, suggesting that also a photovoltaic effect occurs [59,60]. As a first approach to the study of the optoelectronic properties of the device, a series of white laser pulses (60 s long) have been sent on the sample.…”
Mechanically exfoliated multilayer WS2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temperature reveals devices with n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS2 phototransistors can be operated in self-powered mode, yielding both a current and a voltage when exposed to light. The spectral photoresponse in the visible and the NIR ranges shows a high responsivity (4.5 μA/W) around 1250 nm, making the devices promising for telecommunication applications.
“…With the illumination, the gate voltage increases, thus, causes to enhance the effective surface potential. As a result, finally, the effective threshold voltage decreases with the incident light [33]. The bandgap energy of Si Sn was theoretically calculated using the Eqn.…”
Section: Device Design and Theoretical Modelsmentioning
This work examines the possibility of silicon-tin (Si Sn ) alloy grown on silicon (Si) substrate via Si Sn virtual substrate (VS) for use in near-infrared (NIR) photonic devices. In this work, we use the finite element method (FEM) approach to study the proposed Si Sn -based field-effect phototransistors (FEPTs). The introduction of Sn leads to the redshift of wavelength due to the narrowing of bandgap energy. Theoretically, in order to investigate the device's electrical and optical performance, the current under dark and illumination, optical responsivity, and 3dB bandwidth are calculated. Moreover, their dependency on channel-length scaling is also investigated. In comparison to the existing Si phototransistor at λ = 850 nm, the proposed FEPT shows a comparatively high responsivity. Thus, the current work shows that the proposed Si Snbased FEPTs have the potential for use in low-cost optoelectronic receivers in NIR bands.
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