Modeling and characterization of InAs∕GaAs quantum dot lasers grown using metal organic chemical vapor deposition

Abstract

Ground state lasing at 1.34 μ m from In As ∕ Ga As quantum dots grown by antimony-mediated metal organic chemical vapor deposition Appl. Phys. Lett. 90, 241110 (2007); 10.1063/1.2748082Ground-state lasing of stacked In As ∕ Ga As quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor depositionWe report on the lasing characteristics of three-and five-stack InAs/ GaAs quantum dot ͑QD͒ lasers grown by metal organic chemical vapor deposition. By increasing the number of stacked dot layers to 5, lasing was achieved from the ground state at 1135 nm for device lengths as short as 1.5 mm ͑no reflectivity coatings͒. The unamplified spontaneous emission and Z ratio as a function of injection current were also investigated. While the five-stack QD lasers behaved as expected with Z ratios of Ϸ2 prior to lasing, the three-stack QD lasers, which lased from the excited state, exhibited Z-ratio values as high as 4. A simple model was developed and indicated that high Z ratios can be generated by three nonradiative recombination pathways: ͑i͒ high monomolecular recombination within the wetting layer, ͑ii͒ Auger recombination involving carriers within the QDs ͑"unmixed" Auger͒, and ͑iii͒ Auger recombination involving both the QD and wetting layer states ͑"mixed" Auger͒, which dominate once the excited and wetting layer states become populated.

Quantum Dots and Nanowires Grown by Metal–Organic Chemical Vapor Deposition for Optoelectronic Device Applications

“…12. This is attributed to a reduced injection efficiency of carriers into the active region due to increased carrier recombination in the cladding layer [51].…”

“…In our QDIP structures, the QDs are undoped and the carriers are supplied through background doping and electron injection from the contact layers. At small electric fields, as the electric field is increased, more electrons populate the QDs, resulting in an increase in the average sheet electron density and hence an increased dark current [51]. When a large fraction of the QD states are filled, further increase of the electric field does not significantly change the sheet electron density.…”

High bandwidth constant current modulation circuit for carrier lifetime measurements in semiconductor lasers

“…Therefore, there won't be any interference between the measured frequency responses because the noise floor is at least 8-10 dBm lower than the measured data point at the lowest current and the frequency of interest increasing the accuracy of extracted lifetime. For both, low and high bias currents we measured the single pole modulation response of 1.1 µm InAs/GaAs quantum dot laser grown using metal organic chemical vapor deposition [11] across the frequency range of interest using the high bandwidth voltage to current convertor circuit as shown in the Fig. 5.…”

In(Ga)As/GaAs quantum dots for optoelectronic devices

“…Consequently the excited and wetting layer states, which are capable of providing greater gain [24,25], are populated resulting in shorter output wavelengths and increased threshold currents. Work has also indicated that population of the excited and wetting layer states can lead to increased non-radiative recombination [26].…”