DOI: 10.33915/etd.4900
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Modeling and Analysis of GaN/InGaN Light Emitting Diodes

Abstract: Modeling and Analysis of GaN/InGaN Light Emitting Diodes

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Cited by 2 publications
(3 citation statements)
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References 23 publications
(13 reference statements)
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“…The electron beam is focused down to a spot size of ~ 20 nm using electrostatic and magnetic lenses inside the scanning electron microscope (SEM). The main components of an EBL/SEM column are demonstrated in the Figure 5.20 [74], [75]. The electrons are generated from an electron gun that is set at a high accelerating voltage (usually 10-100 kV) to provide enough kinetic energy to the electrons.…”
Section: Electron Beam Lithographymentioning
confidence: 99%
“…The electron beam is focused down to a spot size of ~ 20 nm using electrostatic and magnetic lenses inside the scanning electron microscope (SEM). The main components of an EBL/SEM column are demonstrated in the Figure 5.20 [74], [75]. The electrons are generated from an electron gun that is set at a high accelerating voltage (usually 10-100 kV) to provide enough kinetic energy to the electrons.…”
Section: Electron Beam Lithographymentioning
confidence: 99%
“…It defines which equations to solve which includes poisson, electron and hole continuity. The continuity equations, which describe charge conservation can be written as[54]: ⃗⃗⃗ is the electron current density  ⃗⃗⃗ is the hole current density  n and p are the electron and hole density, respectively.The poisson equation is given by[58]:…”
mentioning
confidence: 99%
“…One of the focuses of this study was to study optical characteristics of Light Emitting Diodes and photoluminescence spectra of quantum wells using Synopsys. Reference has been given to refer for information about physical models used for electrical optimization of Light Emitting Diodes[58]. The physical models implemented in this study were:…”
mentioning
confidence: 99%