Modeling and analysis of crosstalk induced overshoot/undershoot effects in multilayer graphene nanoribbon interconnects and its impact on gate oxide reliability

Sahoo, Manodipan; Rahaman, Hafizur

doi:10.1016/j.microrel.2016.06.017

Cited by 20 publications

(13 citation statements)

References 18 publications

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“…The p.u.l. equivalent quantum capacitance C eq can be solved by applying a recursive method as follows [11], [32], [35], [42],…”

Section: Electrical Modeling Of Mlgnr Interconnects a Two-line Cmentioning

confidence: 99%

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Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

2020

IEEE J. Electron Devices Soc.

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Based on transmission line modeling, a new technology of collaborative applying the ultralow-k dielectric and the high-k dielectric materials in coupled multilayer graphene nanoribbon (MLGNR) interconnects (i.e., case 4) to reduce propagation delay and to expand 3-dB bandwidth of the conventional pristine (undoped) MLGNR interconnects is proposed in this paper. By using the decoupling technique and ABCD parameter matrix approach, the transfer function of the equivalent circuit model for coupled MLGNR interconnects is derived to obtain step response, propagation delay, transfer gain and 3-dB bandwidth under in-phase and out-of-phase crosstalk modes at global level of 7.5 nm technology node, which is based on the defined four cases. The results show that the maximum reduction of propagation delay between the proposed new technology (case 4) and the conventional MLGNR interconnects (case 1) can reach 15.911 ns at out-of-phase crosstalk mode for an interconnect length of 4000 µm. The corresponding 3-dB bandwidth for them can be expanded over 2.978 times in the same length as the former. It is demonstrated that the proposed case 4 can obviously reduce the propagation delay and enhance the transfer gain and 3-dB bandwidth compared with the conventional case 1. Moreover, it is found that the coupled MLGNR interconnect under in-phase mode outperform that under out-of-phase mode in terms of propagation delay, transfer gain and 3-dB bandwidth at the same condition. In addition, it is manifested that the victim line of two-line coupled MLGNR interconnects have lesser propagation delay, higher transfer gain and larger 3-dB bandwidth, as compared to three-line coupled MLGNR interconnects at the same case. The proposed new technology in this paper would be beneficial to improve the performance of MLGNR interconnects and to provide the guidelines for the design of next generation on-chip MLGNR interconnect system. INDEX TERMS MLGNR interconnects, step response, propagation delay, transfer gain, 3-dB bandwidth, ultra-low-k dielectric, high-k dielectric. I. INTRODUCTION With the continuous advancement of semiconductor manufacturing technology in very large-scale integrated (VLSI) circuits, a series of performance degradation on the conventional copper (Cu) based interconnects have been reported, such as the larger resistivity, electro-migration and smaller

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“…The p.u.l. equivalent quantum capacitance C eq can be solved by applying a recursive method as follows [11], [32], [35], [42],…”

Section: Electrical Modeling Of Mlgnr Interconnects a Two-line Cmentioning

confidence: 99%

“…Being similar to the situation of the equivalent quantum capacitance C eq , the p.u.l. equivalent kinetic inductance L eq also can be obtained by using a recursive scheme as below [11], [35], [42],…”

Section: Electrical Modeling Of Mlgnr Interconnects a Two-line Cmentioning

confidence: 99%

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

2020

IEEE J. Electron Devices Soc.

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“…Similarly, the p.u.l. equivalent kinetic inductance L eq also can be computed by using a recursive method as [1,17],…”

Section: Interconnect Modelmentioning

confidence: 99%

“…In references [14][15][16], the propagation delay and transfer gain for a single-line of MLGNR interconnect were investigated. In reference [17], Sahoo et al analyzed the characteristic of crosstalk noise of coupled MLGNR interconnects, considering the coupling capacitance. In reference [1], Zhao et al analyzed and compared the performance difference of crosstalk noise and crosstalk delay between coupled MLGNR and Cu interconnects, considering the impact of coupling capacitance.…”

Section: Introductionmentioning

confidence: 99%

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

Tang

2019

Electronics

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The ultra-low-k dielectric material replacing the conventional SiO2 dielectric medium in coupled multilayer graphene nanoribbon (MLGNR) interconnects is presented. An equivalent distributed transmission line model of coupled MLGNR interconnects is established to derive the analytical expressions of crosstalk delay, transfer gain, and noise output for 7.5 nm technology node at global level, which take the in-phase and out-of-phase crosstalk into account. The results show that by replacing the SiO2 dielectric mediums with the nanoglass, the maximum reduction of delay time and peak noise voltage are 25.202 ns and 0.102 V for an interconnect length of 3000 µm, respectively. It is demonstrated that the ultra-low-k dielectric materials can significantly reduce delay time and crosstalk noise and increase transfer gain compared with the conventional SiO2 dielectric medium. Moreover, it is found that the coupled MLGNR interconnect under out-of-phase mode has a larger crosstalk delay and a lesser transfer gain than that under in-phase mode, and the peak noise voltage increases with the increase of the coupled MLGNR interconnect length. The results presented in this paper would be useful to aid in the enhancement of performance of on-chip interconnects and provide guidelines for signal characteristic analysis of MLGNR interconnects.

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“…The expression for the distributed resistance capacitance inductance (RLC) parameters (i.e. R cu , L cu and C cu ) of copper interconnect are shown below [12,19]:…”

Section: Introductionmentioning

confidence: 99%

Performance and signal integrity analysis of intercalation‐doped MLVGNR interconnects

Kumari

Sahoo

2020

IET Circuits, Devices & Systems

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In this work, signal integrity, power consumption and stability of multilayer vertical graphene nanoribbon (MLVGNR) interconnects are determined and compared with multilayer horizontal GNR (MLHGNR) and conventional copper interconnects for different intercalation dopants and specularity indices. Lithium-intercalated MLVGNR outperforms these conventional interconnects in terms of delay. However, it is not very much immune to noise and also consumes more power but overall noise delay product and power delay product are least among all. As far as stability is concerned, MLVGNR interconnects have a comparable gain and phase margin and a steep transient response without an undershoot as compared with other interconnect configurations, which experience undershoot. It is worth to point out that MLVGNR interconnects are more amenable to scaling compared with other alternatives. This study for the first time analyses and compares the performance, signal integrity and stability of MLVGNR, MLHGNR and copper interconnects.

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Modeling and analysis of crosstalk induced overshoot/undershoot effects in multilayer graphene nanoribbon interconnects and its impact on gate oxide reliability

Cited by 20 publications

References 18 publications

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

Performance and signal integrity analysis of intercalation‐doped MLVGNR interconnects

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