Modeling alumina atomic layer deposition reaction kinetics during the trimethylaluminum exposure

Modeling Mechanism and Growth Reactions for New Nanofabrication Processes by Atomic Layer Deposition

“…[ 23 ] The results show that a combination of TMA adsorption on bare and hydroxylated surface oxygen sites is needed in order to produce growth rates that are comparable with experiments in the saturation regime. Adomaitis and co-workers also use the known mechanistic data on Al 2 O 3 ALD to demonstrate a reaction factorization technique that rigorously determines if the deposition process time scales can be separated.…”

Reaction factorization for the dynamic analysis of atomic layer deposition kinetics

“…Further details on the computation of (37) can be found in Travis and Adomaitis (2013c). The numerical results for this example and all other species are summarized in Table 2.…”

“…As described in Travis (2014), water readily adsorbs on bare alumina surfaces, regenerating the surface hydroxyl HO 0 groups. For this study, we incorporate reaction R 22 and a modification of R 23 of her work (p. 86) to describe water adsorption and subsequent reaction in the following manner:…”

Modeling the precursor utilization in atomic layer deposition on nanostructured materials in fluidized bed reactors

“…For this reason, for ALD on nanoparticles in FBRs, the dynamics of both the TMA and H 2 O exposures are modeled by coupling a multiscale precursor transport model with a detailed description of the adsorption kinetics and surface coverage dynamics. The latter is based on the kinetic model for TMA/H 2 O ALD recently developed by Travis et al [26][27][28] from absolute reaction theory, which we will briefly describe later. This kinetic model has the advantage that it uses no empirical or simulation-based sticking coefficients to describe ALD dynamics, as often done in other approaches [29][30][31].…”