Abstract:In this work, a numerical modeling analysis of the gas-phase decomposition of SF 6 / O 2 mixtures, in the presence of silicon, was performed. The relative importance of individual processes and the effect of the parameters' uncertainties were determined. The model was compared with experimental data for the plasma etching of silicon and with the calculated results for the CF 4 / O 2 system. In both systems the main etching agent is the fluorine atom and the concentration of the major species depends on the com… Show more
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