Model Order Reduction for Multiband Quantum Transport Simulations and its Application to p-Type Junctionless Transistors

Huang, Jun; Chew, Weng Cho; Peng, Jie; Yam, ChiYung; Jiang, Li Jun; Chen, Guanhua

doi:10.1109/ted.2013.2260546

Cited by 26 publications

(27 citation statements)

References 33 publications

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“…The reduced basis V i (i is arbitrary here) is constructed by sampling the Bloch modes evenly in the Brillouin zone (at k = 0, ±π/4, ±2π/4, and ±3π/4 [1/nm]), with the energy E ∈ [−0.5eV, 1.7 eV], which results in N m = 262 modes. Note that the modes at negative k can be obtained by a transformation of those at positive k [10]. Clearly, the reduced Hamiltonian reproduces quite well the dispersion bands in that energy window (except at the very bottom, which can be improved by sampling a slightly larger energy window or more k points), demonstrating that the k space sampling is effective.…”

Section: Spurious Band Eliminationmentioning

confidence: 78%

“…To approximate the band structure over that small region, V i then consists of the Bloch modes with energy lying in that region. Multiplepoint construction based on k space sampling and (or) E space sampling can be employed [10]. Here, k space sampling is adopted since E space sampling is more costly and that the eight-band matrix is much larger than the six-or three-band case.…”

Section: B Model Order Reductionmentioning

confidence: 99%

“…In [10], FDM is adopted and it results in extremely sparse matrices. Therefore, the Bloch modes can be obtained efficiently with sparse matrix solvers.…”

Section: Discretizationmentioning

confidence: 99%

“…For three-and six-band k · p models, as is shown in [10], by sampling the Bloch modes at multiple points in the k space and (or) E space, a significantly reduced Hamiltonian can be constructed that describes very well the valence band top, based on which p-type SiNW FETs are simulated with good accuracy and efficiency. However, direct extension of this method to eight-band k · p model fails.…”

mentioning

confidence: 99%

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Model Order Reduction for Quantum Transport Simulation of Band-To-Band Tunneling Devices

Huang

Zhang

Chew

et al. 2014

IEEE Trans. Electron Devices

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Simulations of nanoelectronic devices with nonequilibrium Green's function are computationally very intensive, in particular, when combined with multiband approaches, such as the k · p methods. To reduce the cost and make the simulation of realistic devices tractable, we have developed a model order reduction method for the simulation of hole transport in silicon nanowires using three-and six-band k · p models. It is shown in this paper that, with a spurious band elimination process, the method can be readily extended to the eight-band case that enables us to simulate band-to-band tunneling devices. The method is demonstrated via constructing reduced models for indium arsenide (InAs) nanowires and simulation of I-V characteristics of InAs tunneling field-effect transistors (TFETs). The results indicate that significant model reduction can be achieved with good accuracy retained. The method is then applied to study InAs TFETs with different channel orientations and source-pocket TFETs with n-p-i-p doping profiles.Index Terms-Band-to-band tunneling (BTBT), eight-band k · p model, indium arsenide (InAs) nanowires, model order reduction (MOR), nonequilibrium Green's function (NEGF), source-pocket TFETs, tunneling field-effect transistors (TFETs).

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Section: Spurious Band Eliminationmentioning

confidence: 78%

Section: B Model Order Reductionmentioning

confidence: 99%

“…In [10], FDM is adopted and it results in extremely sparse matrices. Therefore, the Bloch modes can be obtained efficiently with sparse matrix solvers.…”

Section: Discretizationmentioning

confidence: 99%

mentioning

confidence: 99%

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Model Order Reduction for Quantum Transport Simulation of Band-To-Band Tunneling Devices

Huang

Zhang

Chew

et al. 2014

IEEE Trans. Electron Devices

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“…Reference [33] studied the SS and DIBL degradation with channel thickness and length scaling down. The quantum effect has been considered in the calibrated 7-nm FinFET 3-D quantum correction model.…”

Section: F Curved Channel Modeling and Other Effect Estimationmentioning

confidence: 99%

Vertical Slit FET at 7-nm Node and Beyond

Yang

Hook²,

Oldiges

et al. 2016

IEEE Trans. Electron Devices

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This paper investigates the n-type vertical slit FET (VeSFET) performance at 7-nm node and beyond by TCAD simulation. VeSFET is a twin-gate device with 3-D monolithic integration-friendly vertical terminals and horizontal channel manufactured based on SOI wafer with conventional CMOS fabrication hardware. The second gate provides the capability of transistor behavior adjustment and the potential for advanced circuit designs. The results show that VeSFET can provide high I eff to I off ratio, low gate capacitance, high V t /V g2s , and competitive drive capability with respect to a reference FinFET of comparable dimensions.

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Tight-Binding Models, Their Applications to Device Modeling, and Deployment to a Global Community

Klimeck

Boykin²

2022

Springer Handbook of Semiconductor Devices

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Model Order Reduction for Multiband Quantum Transport Simulations and its Application to p-Type Junctionless Transistors

Cited by 26 publications

References 33 publications

Model Order Reduction for Quantum Transport Simulation of Band-To-Band Tunneling Devices

Model Order Reduction for Quantum Transport Simulation of Band-To-Band Tunneling Devices

Vertical Slit FET at 7-nm Node and Beyond

Tight-Binding Models, Their Applications to Device Modeling, and Deployment to a Global Community

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