Model of Stress Evolution in Polycrystalline Oxide and Composite Thin Films

Jingping, 李静平 Li; Ming, 方明 Fang; Hongbo, 贺洪波 He; Jianda, 邵建达 Shao; Zhengxiu, 范正修 Fan; Zhaoyang, 李朝阳 Li

doi:10.3788/aos201232.1031004

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Figure 4 Thin Film Of the Afm Surface Micro Topography1

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2015

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“…To calculate the TIS of Al2O3, Ta2O5 and Nb2O5 films in 2.7µm and 3.8µm, and the consequences list in Table 3 As we can see from the Table, The preparation of ion beam sputtering oxide films have a low RMS and are in order of magnitude 0.1 nm. The corresponding total integral scattering is very small, which to the point of can be ignored [9].…”

Section: Figure 4 Thin Film Of the Afm Surface Micro Topographymentioning

confidence: 99%

Preparation and Characteristics of Single Layer Oxide Thin Film

Zhu¹,

Xiao²

2015

Proceedings of the 2015 2nd International Workshop on Materials Engineering and Computer Sciences

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Abstract. This This Al 2 O 3 , SiO 2 , Ta 2 O 5 , Nb 2 O 5 , TiO 2 single layer oxide thin film are prepared by using ion beam sputtering deposition technology. The oxide films infrared optical constants are fitted by infrared variable elliptic polarization Angle spectrum instrument (IR -VASE), the results show that the fitting optical constants n, k in line with the material properties. The oxide thin film surface roughness are analyzed by AFM (Nanosurf Easysc -2), and research findings show the compact structure of oxide film and RMS of surface roughness in 0.1 nm, which scattering is smaller.

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Section: Figure 4 Thin Film Of the Afm Surface Micro Topographymentioning

confidence: 99%