Model of leakage characteristics of (Ba, Sr)TiO3 thin films

Maruno, Shigemitsu; Kuroiwa, Takeharu; Mikami, Naohiko; Sato, Ken; Ohmura, Shunsuke; Kaida, M.; Yasue, Tsuneo; Koshikawa, Takanori

doi:10.1063/1.122050

Cited by 81 publications

(46 citation statements)

References 5 publications

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“…The leakage current characteristics are distinctly different in the range of higher dc fields, both in the positive and negative voltage region. This may be caused by generation of a different amount of oxygen vacancy at the top Au/BTS interface and at the bottom Pt/BTS interface [15]. The asymmetry between the positive and negative voltage parts of the J-V characteristic could be attributed to oxygen vacancies and movable ions at the top Au/BTS interface and the bottom LNO/BTS interface [15,16], which is consistent with the C-V results.…”

Section: Resultssupporting

confidence: 83%

Structure and dielectric properties of Ba(Sn0.2Ti0.8)O3 thin films grown on different substrates by a sol-gel process

2007

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Ba(Sn 0.2 Ti 0.8 )O 3 (BTS) thin films were deposited on Pt/Ti/SiO 2 /Si and LaNiO 3 /Pt/Ti/SiO 2 /Si substrates by a sol-gel processing technique, respectively. The influences of substrates on the phase and microstructure of the thin films were examined. Dielectric properties of the thin films were investigated as a function of frequency and direct current electric field. The results showed that the substrates strongly influenced the microstructure and the dielectric properties of the films. The properties of BTS thin films on LaNiO 3 /Pt/Ti/SiO 2 /Si substrates were superior to that of the films grown on Pt/Ti/SiO 2 /Si substrates.

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Section: Resultssupporting

confidence: 83%

Structure and dielectric properties of Ba(Sn0.2Ti0.8)O3 thin films grown on different substrates by a sol-gel process

2007

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“…In Fig. 3, it is also indicated that the dielectric loss of the BST thin films decreased with the increasing in Ca content, which is consistent with the result of the leakage current shown in [16].…”

Section: Methodssupporting

confidence: 93%

Structure and dielectric properties of Ca-doped (Ba0.7Sr0.3) TiO3 thin films fabricated by sol–gel method

et al. 2007

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A wide range of Ca-doped (Ba 0.7 Sr 0.3 )TiO 3 (BST) thin films (from 0 to 20 mol%) have been prepared on Pt/Ti/ SiO 2 /Si (100) substrates by sol-gel technique. The structural and dielectric properties of BST thin films were investigated as a function of Ca dopant concentration. The results showed that the microstructure and dielectric properties of the BST films were strongly dependent on the Ca contents. With the Ca dopant concentration increasing, the grain size, dielectric constant and dielectric loss of the BST thin films decreased. As the content of Ca dopant reaches 10 mol%, the dielectric constant, dielectric loss, tunability, the value of FOM and the leakage current density are 281, 0.0136, 16.7%, 12.3 and 5.5×10 −6 A/cm 2 , respectively.

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“…This has helped to elucidate the effects of microstructures on the device performance. The effects of oxygen vacancies on electrical properties such as low-frequency dielectric relaxation and electric conduction, 20 I-V and C-V characteristics of metalferroelectric-semiconductor field-effect transistors ͑MFSFETs͒, 21 and leakage current 22 have also been simulated.…”

Section: Introductionmentioning

confidence: 99%

Modeling the role of oxygen vacancy on ferroelectric properties in thin films

2002

Journal of Applied Physics

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The presence of oxygen vacancies is considered to be the cause of various phenomena in ferroelectric thin films. In this work, the role of oxygen vacancies is theoretically modeled. Various properties are numerically simulated using the two-dimensional Ising model. In the presence of an oxygen vacancy in a perovskite cell, the octahedral cage formed by oxygen ions is distorted so that the potential energy profile for the displacement of the titanium ion becomes asymmetric. It requires additional energy to move from the lower minimum position to the higher one. Moreover, space charges are also developed by trapping charge carriers into these vacancies. The combination of the pinning effect induced by the distorted octahedral cage and the screening of the electric field in the presence of space charges results in phenomena such as fatigue and imprint.

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Model of leakage characteristics of (Ba, Sr)TiO3 thin films

Cited by 81 publications

References 5 publications

Structure and dielectric properties of Ba(Sn0.2Ti0.8)O3 thin films grown on different substrates by a sol-gel process

Structure and dielectric properties of Ba(Sn0.2Ti0.8)O3 thin films grown on different substrates by a sol-gel process

Structure and dielectric properties of Ca-doped (Ba0.7Sr0.3) TiO3 thin films fabricated by sol–gel method

Modeling the role of oxygen vacancy on ferroelectric properties in thin films

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